Patents Assigned to Tae-Won Noh
  • Nonvolatile ferroelectric capacitor and nonvolatile ferroelectric memory
    Patent number: 6323512
    Abstract: A nonvolatile ferroelectric capacitor comprising Bi4−xAxTi3O12 thin film which is obtained by substituting at least some atoms of nonvolatile element A such as La for volatile Bi atoms in Bi4Ti3O2. Nonvolatile element A in perovskite layer of B4−xAxTi3O12 suppress the generation of oxygen vacancies in the perovskite layer, thereby improving fatigue behavior.
    Type: Grant
    Filed: March 7, 2000
    Date of Patent: November 27, 2001
    Assignee: Tae-Won Noh
    Inventors: Tae-Won Noh, Bae-ho Park, Bo-Soo Kang, Sang-Don Bu