Abstract: A nonvolatile ferroelectric capacitor comprising Bi4−xAxTi3O12 thin film which is obtained by substituting at least some atoms of nonvolatile element A such as La for volatile Bi atoms in Bi4Ti3O2. Nonvolatile element A in perovskite layer of B4−xAxTi3O12 suppress the generation of oxygen vacancies in the perovskite layer, thereby improving fatigue behavior.
Type:
Grant
Filed:
March 7, 2000
Date of Patent:
November 27, 2001
Assignee:
Tae-Won Noh
Inventors:
Tae-Won Noh, Bae-ho Park, Bo-Soo Kang, Sang-Don Bu