Abstract: A wafer chucking apparatus for a plasma process includes a lower plate, on which a plurality of wafers are loaded, and an upper plate, which is coupled to an upper portion of the lower plate and fixes the loaded wafers. The upper plate is made of one of Teflon, ceramic and metal, and the lower plate is made of aluminum or ceramic. The lower plate includes a drilled gas feed hole through which gas is fed so as to uniformly maintain temperature of each wafer during the plasma process. One of more of an isothermal sheet and an isothermal coating layer is formed between the wafers and the lower plate so as to maintain temperature uniformity of the wafers. Thereby, the wafer chucking apparatus can improve uniformity of plasma-etched patterns at an edge zone of each wafer during the plasma process.

Abstract: A wafer chucking apparatus for a plasma process includes a lower plate, on which a plurality of wafers are loaded, and an upper plate, which is coupled to an upper portion of the lower plate and fixes the loaded wafers. The upper plate is made of one of Teflon, ceramic and metal, and the lower plate is made of aluminum or ceramic. The lower plate includes a drilled gas feed hole through which gas is fed so as to uniformly maintain temperature of each wafer during the plasma process. One of more of an isothermal sheet and an isothermal coating layer is formed between the wafers and the lower plate so as to maintain temperature uniformity of the wafers. Thereby, the wafer chucking apparatus can improve uniformity of plasma-etched patterns at an edge zone of each wafer during the plasma process.