Abstract: The present disclosure provides a method that includes coating an edge portion of a wafer by a first chemical solution including a chemical mixture of an acid-labile group, a solubility control unit and a thermal acid generator; curing the first chemical solution to form a first protecting layer on the edge portion of the wafer; coating a resist layer on a front surface of the wafer; removing the first protecting layer by a first removing solution; and performing an exposing process to the resist layer.

Abstract: A method for reducing or avoiding semiconductor wafer peripheral defects and contamination during and following electrodeposition including providing a wafer chuck assembly sealably attached to a back side of a semiconductor wafer leaving an exposed peripheral portion of the back side of the semiconductor wafer the backside parallel to a front side of the semiconductor wafer comprising a process surface; contacting at least the semiconductor process surface with a process solution; and, simultaneously directing a pressurized flow of gas onto the exposed peripheral portion such that the pressurized flow of gas covers the exposed peripheral portion including being radially directed outward toward the periphery of the semiconductor wafer.