Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.

Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.

Abstract: A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively.

Abstract: A manufacturing method for a buried circuit structure includes providing a substrate having at least a trench formed therein, forming a firs conductive layer on the substrate blanketly, forming a patterned photoresist having a surface lower than an opening of the trench in the trench, removing the first conductive layer not covered by the patterned photoresist to form a second conductive layer having a top lower than an opening of the trench in the trench, removing the patterned photoresist, performing a dry etching process to remove the second conductive layer from the bottom of the trench to form a third conductive layer on the sidewalls of the trench, performing a selective metal chemical vapor deposition to form a metal layer having a surface lower than a surface of the substrate, and forming a protecting layer filling the trench on the metal layer.

Abstract: A manufacturing method for a buried circuit structure includes providing a substrate having at least a trench therein, forming a conductive layer having a top lower than an opening of the trench in the trench, performing a selective metal chemical vapor deposition (CVD) to form a metal layer having a top lower than the substrate in the trench, and forming a protecting layer filling the trench on the metal layer.