Patents Assigned to TAIWAN SEMCONDUCTOR MANUFACTURING COMPANY, LTD.
  • Fin field effect transistor gate oxide
    Patent number: 9105661
    Abstract: The present disclosure provides for methods of fabricating a semiconductor device and such a device. A method includes providing a substrate including at least two isolation features, forming a fin substrate above the substrate and between the at least two isolation features, forming a silicon liner over the fin substrate, and oxidizing the silicon liner to form a silicon oxide liner over the fin substrate.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: August 11, 2015
    Assignee: Taiwan Semconductor Manufacturing Company, Ltd.
    Inventors: Gin-Chen Huang, Neng-Kuo Chen, Hsingjen Wann
  • METHOD FOR FORMING HIGH-K METAL GATE DEVICE
    Publication number: 20110108928
    Abstract: The present disclosure provides a method of fabricating a semiconductor device that includes providing a semiconductor substrate, forming a metal gate on the substrate, the metal gate having a first gate resistance, removing a portion of the metal gate thereby forming a trench; and forming a conductive structure within the trench such that a second gate resistance of the conductive structure and remaining portion of the metal gate is lower than the first gate resistance.
    Type: Application
    Filed: November 12, 2009
    Publication date: May 12, 2011
    Applicant: TAIWAN SEMCONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lee-Wee Tao, Han-Guan Chew, Harry Hak-Lay Chuang, Syun-Ming Jang