Patents Assigned to Taiwan Semiconductar Manufacturing Campany
  • Dam for three-dimensional integrated circuit
    Patent number: 10020236
    Abstract: An apparatus comprising a first substrate, a dam structure disposed on a first side of the first substrate, and an integrated circuit (IC) memory chip coupled to the first side of the first substrate by a plurality of first conductive members. A second substrate is coupled to a second side of the first substrate by a plurality of second conductive members. A lid coupled to the second substrate encloses the IC memory chip and the first substrate. A thermal interface material (TIM) is coupled between the lid and the dam structure.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: July 10, 2018
    Assignee: Taiwan Semiconductar Manufacturing Campany
    Inventors: Tsung-Ding Wang, An-Jhih Su, Chien Ling Hwang, Jung Wei Cheng, Hsin-Yu Pan, Chen-Hua Yu