Patents Assigned to Taiwan Semiconductor Company, Ltd.
  • Alpha tantalum capacitor plate
    Patent number: 7969708
    Abstract: A method for forming an alpha-tantalum layer comprising disposing a nitrogen containing base layer on a semiconductor substrate, bombarding the nitrogen containing base layer with a bombarding element, thereby forming an alpha-tantalum seed layer, and sputtering a layer of tantalum on the alpha-tantalum seed layer, thereby forming a surface layer of substantially alpha-tantalum.
    Type: Grant
    Filed: November 1, 2007
    Date of Patent: June 28, 2011
    Assignee: Taiwan Semiconductor Company, Ltd.
    Inventors: Jung-Chih Tsao, Miao-Cheng Liao, Phil Sun, Kei-Wei Chen