Patents Assigned to TAIWAN SEMICONDUCTOR LTD
  • Patent number: 11894299
    Abstract: A method includes forming a dielectric layer over a contact pad of a device, forming a first polymer layer over the dielectric layer, forming a first conductive line and a first portion of a second conductive line over the first polymer layer, patterning a photoresist to form an opening over the first portion of the second conductive feature, wherein after patterning the photoresist the first conductive line remains covered by photoresist, forming a second portion of the second conductive line in the opening, wherein the second portion of the second conductive line physically contacts the first portion of the second conductive line, and forming a second polymer layer extending completely over the first conductive line and the second portion of the second conductive line.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: February 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR LTD
    Inventors: Chao-Wen Shih, Chen-Hua Yu, Han-Ping Pu, Hsin-Yu Pan, Hao-Yi Tsai, Sen-Kuei Hsu