Patents Assigned to TAIWAN SEMICONDUCTOR MANAFACTURING COMPANY, LTD.
  • Integrated circuit having a MOM capacitor and transistor
    Patent number: 11133301
    Abstract: An integrated circuit can include a MOM capacitor formed simultaneously with other devices, such as finFETs. A dielectric layer formed on a substrate has a first semiconductor fin therein and a second semiconductor fin therein. Respective top portions of the fins are removed to form respective recesses in the dielectric layer. First and second electrodes are formed in the recesses. The first and second electrodes and the interjacent dielectric layer form a MOM capacitor.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: September 28, 2021
    Assignee: Taiwan Semiconductor Manafacturing Company, Ltd.
    Inventors: Chi-Wen Liu, Chao-Hsiung Wang
  • SPLIT-GATE DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20130207174
    Abstract: A semiconductor device includes a substrate; a storage element disposed over the substrate in a first region; a control gate disposed over the storage element; a high-k dielectric layer disposed on the substrate in a second region adjacent the first region; and a metal select gate disposed over the high-k dielectric layer and adjacent to the storage element and the control gate.
    Type: Application
    Filed: February 13, 2012
    Publication date: August 15, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANAFACTURING COMPANY, LTD.
    Inventors: Yu-Hsiung Wang, Chih-Ren Hsieh, Tung-Sheng Hsiao