Patents Assigned to TAIWAN SEMICONDUCTOR MANUFACIURING CO., LTD.
  • Patent number: 11211479
    Abstract: A method of fabricating a trimmed fin includes: forming a preliminary fin including silicon and germanium protruding from a substrate, in which the preliminary fin has a first germanium concentration at a top surface of the preliminary fin and a second germanium concentration at a position beneath the top surface of the preliminary fin, and the first germanium concentration is less than the second germanium concentration; oxidizing an exposed surface of the preliminary fin to form a trimmed fin covered by an oxide layer; and removing the oxide layer to obtain the trimmed fin.
    Type: Grant
    Filed: October 9, 2018
    Date of Patent: December 28, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACIURING CO., LTD.
    Inventors: Yu-Cheng Shen, Guan-Jie Shen