Abstract: A plasma etch method for patterning for use within an integrated circuit a blanket conductor layer such that an integrated circuit layer adjoining the blanket conductor layer is not damaged when the blanket conductor layer is patterned to form a patterned conductor layer through the plasma etch method. There is first provided a semiconductor substrate. There is then formed over the semiconductor substrate a blanket conductor layer, where the blanket conductor layer communicates electrically with the semiconductor substrate in a fashion such that an electrical charge is shunted from the blanket conductor layer into the semiconductor substrate when the blanket conductor layer is patterned to form the patterned conductor layer through the plasma etch method. There is then patterned through the plasma etch method the blanket conductor layer to form the patterned conductor layer.