Patents Assigned to Taiwan Semiconductor Manufacturing Company, Limited
  • Patent number: 11955561
    Abstract: A disclosed transistor structure includes a gate electrode, an active layer, a source electrode, a drain electrode, an insulating layer separating the gate electrode from the active layer, and a carrier modification device that reduces short channel effects by reducing carrier concentration variations in the active layer. The carrier modification device may include a capping layer in contact with the active layer that acts to increase a carrier concentration in the active layer. Alternatively, the carrier modification device may include a first injection layer in contact with the source electrode and the active layer separating the source electrode from the active layer, and a second injection layer in contact with the drain electrode and the active layer separating the drain electrode from the active layer. The first and second injection layers may act to reduce a carrier concentration within the active layer near the source electrode and the drain electrode.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wu-Wei Tsai, Hai-Ching Chen
  • Patent number: 11956940
    Abstract: A memory cell comprises a nanowire structure comprising a channel region and source/drain regions of a transistor. The nanowire structure also comprises as first conductor of a capacitive device as a vertical extension of the nanowire structure.
    Type: Grant
    Filed: January 29, 2023
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Gerben Doornbos, Marcus Johannes Henricus Van Dal
  • Patent number: 11955405
    Abstract: A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.
    Type: Grant
    Filed: January 17, 2022
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Jen Yu Wang, Chung-Jung Wu, Sheng-Tsung Hsiao, Tung-Liang Shao, Chih-Hang Tung, Chen-Hua Yu
  • Patent number: 11947713
    Abstract: Systems and method are provided for determining a reliability of a physically unclonable function (PUF) cell of a device. One or more activation signals are provided to a PUF cell under a plurality of conditions. A PUF cell output provided by the PUF cell under each of the plurality of conditions is determined. A determination is made of a number of times the PUF cell output of the PUF cell is consistent. And a device classification value is determined based on the determined number of times for a plurality of PUF cells.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Cheng-En Lee, Shih-Lien Linus Lu
  • Patent number: 11948628
    Abstract: Disclosed herein are related to a memory system and a method of operating the memory system. In one aspect, resistances of a first memory cell, a second memory cell, a third memory cell, and a fourth memory cell are individually set. In one aspect, the first memory cell and the second memory cell are coupled to each other in series between a first line and a second line, and the third memory cell and the fourth memory cell are coupled to each other in series between the second line and a third line. In one aspect, current through the second line according to a parallel resistance of i) a first series resistance of the first memory cell and the second memory cell, and ii) a second series resistance of the third memory cell and the fourth memory cell is sensed. According to the sensed current, multi-level data can be read.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventor: Shih-Lien Linus Lu
  • Patent number: 11950518
    Abstract: A phase-change memory device and method of manufacturing the same, the memory device including: a substrate; a bottom electrode disposed over the substrate; a top electrode disposed over the bottom electrode; and a phase-change layer disposed between the top and bottom electrodes. The phase change layer includes a chalcogenide Ge—Sb—Te (GST) material that includes at least 30 at % Ge and that is doped with a dopant including N, Si, Sc, Ga, C, or any combination thereof.
    Type: Grant
    Filed: May 27, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventor: Jau-Yi Wu
  • Patent number: 11943933
    Abstract: A memory device includes metal interconnect structures embedded within dielectric material layers that overlie a top surface of a substrate, a thin film transistor embedded in a first dielectric material layer selected from the dielectric material layers, and is vertically spaced from the top surface of the substrate, and a ferroelectric memory cell embedded within the dielectric material layers. A first node of the ferroelectric memory cell is electrically connected to a node of the thin film transistor through a subset of the metal interconnect structures that is located above, and vertically spaced from, the top surface of the substrate.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Bo-Feng Young, Mauricio Manfrini, Sai-Hooi Yeong, Han-Jong Chia, Yu-Ming Lin
  • Patent number: 11940659
    Abstract: An optical integrated circuit (IC) structure includes: a substrate including a fiber slot formed in an upper surface of the substrate and extending from an edge of the substrate, and an undercut formed in the upper surface and extending from the fiber slot; a semiconductor layer disposed on the substrate; a dielectric structure disposed on the semiconductor layer; an interconnect structure disposed in the dielectric structure; a plurality of vents that extend through a coupling region of the dielectric structure and expose the undercut; a fiber cavity that extends through the coupling region of dielectric structure and exposes the fiber slot; and a barrier ring disposed in the dielectric structure, the barrier ring surrounding the interconnect structure and routed around the perimeter of the coupling region.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chen-Hao Huang, Hau-Yan Lu, Sui-Ying Hsu, Yuehying Lee, Chien-Ying Wu, Chia-Ping Lai
  • Patent number: 11942147
    Abstract: A memory device is provided, which may include a first electrode, a memory layer stack including at least one semiconducting metal oxide layer and at least one hydrogen-containing metal layer, and a second electrode. A semiconductor device is provided, which may include a semiconducting metal oxide layer containing a source region, a drain region, and a channel region, a hydrogen-containing metal layer located on a surface of the channel region, and a gate electrode located on the hydrogen-containing metal layer. Each hydrogen-containing metal layer may include at least one metal selected from platinum, iridium, osmium, and ruthenium at an atomic percentage that is at least 90%, and may include hydrogen atoms at an atomic percentage in a range from 0.001% to 10%. Hydrogen atoms may be reversibly impregnated into a respective semiconducting metal oxide layer to change resistivity and to encode a memory bit.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Marcus Johannes Henricus Van Dal, Gerben Doornbos, Georgios Vellianitis, Blandine Duriez, Mauricio Manfrini
  • Patent number: 11942146
    Abstract: Various embodiments provide methods for configuring a phase-change random-access memory (PCRAM) structures, such as PCRAM operating in a single-level-cell (SLC) mode or a multi-level-cell (MLC) mode. Various embodiments may support a PCRAM structure being operating in a SLC mode for lower power and a MLC mode for lower variability. Various embodiments may support a PCRAM structure being operating in a SLC mode or a MLC mode based at least in part on an error tolerance for a neural network layer.
    Type: Grant
    Filed: February 13, 2023
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Win-San Khwa, Kerem Akarvardar, Yu-Sheng Chen
  • Patent number: 11943908
    Abstract: Systems and methods are provided for forming an intra-connection structure. A first gate structure and a first source/drain region adjacent to the first gate structure is formed on a substrate. A first dielectric material is disposed on the first source/drain region. A spacer material is formed on the first gate structure. The first dielectric material is removed to expose at least part of the first source/drain region. At least part of the spacer material is removed to expose at least part of the first gate structure. A first conductive material is formed between the first gate structure and the first source/drain region to electrically connect the first source/drain region and the first gate structure.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Feng-Ming Chang, Kuo-Hsiu Hsu
  • Publication number: 20240096893
    Abstract: A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Shih-Yao Lin, Chao-Cheng Chen, Chih-Han Lin, Ming-Ching Chang, Wei-Liang Lu, Kuei-Yu Kao
  • Patent number: 11935935
    Abstract: A thin film transistor includes a gate electrode embedded in an insulating layer that overlies a substrate, a gate dielectric overlying the gate electrode, an active layer comprising a compound semiconductor material and overlying the gate dielectric, and a source electrode and drain electrode contacting end portions of the active layer. The gate dielectric may have thicker portions over interfaces with the insulating layer to suppress hydrogen diffusion therethrough. Additionally or alternatively, a passivation capping dielectric including a dielectric metal oxide material may be interposed between the active layer and a dielectric layer overlying the active layer to suppress hydrogen diffusion therethrough.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Min-Kun Dai, Wei-Gang Chiu, I-Cheng Chang, Cheng-Yi Wu, Han-Ting Tsai, Tsann Lin, Chung-Te Lin
  • Patent number: 11929273
    Abstract: A system and computer-implemented method are provided for manufacturing a semiconductor electronic device. An assembler receives a jig and a boat supporting a die. The assembler includes a separator that separates the jig into a first jig portion and a second jig portion and a loader that positions the boat between the first jig portion and the second jig portion. A robot receives an assembly prepared by the assembler and manipulates a locking system that fixes an alignment of the boat relative to the first jig portion and the second jig portion to form a locked assembly. A process chamber receives the locked assembly and subjects the locked assembly to a fabrication operation.
    Type: Grant
    Filed: July 27, 2020
    Date of Patent: March 12, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Tsung-Sheng Kuo, Chih-Hung Huang, Guan-Wei Huang, Ping-Yung Yen, Hsuan Lee, Jiun-Rong Pai
  • Patent number: 11929436
    Abstract: A thin film transistor includes an insulating matrix layer including an opening therein, a hydrogen-blocking dielectric barrier layer continuously extending over a bottom surface and sidewalls of the opening and over a top surface of the insulating matrix layer, a gate electrode located within the opening, a stack of a gate dielectric and a semiconducting metal oxide plate overlying the gate electrode and horizontally-extending portions of the hydrogen-blocking dielectric barrier layer that overlie the insulating matrix layer, and a source electrode and a drain electrode contacting a respective portion of a top surface of the semiconducting metal oxide plate.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: March 12, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Neil Murray, Hung-Wei Li, Mauricio Manfrini
  • Patent number: 11923263
    Abstract: A semiconductor device includes a substrate, a chip underlying the substrate, a chip overlying the substrate, and a dummy die overlying the substrate. A pattern of the dummy die includes a first interior sidewall and a second interior sidewall, and a stress relief material between the first interior sidewall and the second interior sidewall to form a dummy die stress balance pattern.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventor: Jen-Yuan Chang
  • Patent number: 11925032
    Abstract: A memory device includes an array of memory cells overlying a substrate and located in a memory array region. Each of the memory cells includes a bottom electrode, a vertical stack containing a memory element and a top electrode, and dielectric sidewall spacers located on sidewalls of each vertical stack. The bottom electrode comprises a flat-top portion that extends horizontally beyond an outer periphery of the dielectric sidewall spacers. The device also includes a discrete etch stop dielectric layer over each of the memory cells that includes a horizontally-extending portion that extends over the flat-top portion of the bottom electrode. The device also includes metallic cell contact structures that contact a respective subset of the top electrodes and a respective subset of vertically-protruding portions of the discrete etch stop dielectric layer.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventor: Chung-Chiang Min
  • Patent number: 11921430
    Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Tsiao-Chen Wu, Chi-Ming Yang, Hsu-Shui Liu
  • Patent number: 11921325
    Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.
    Type: Grant
    Filed: February 27, 2020
    Date of Patent: March 5, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Yi-Chen Chen, Lee-Chuan Tseng, Shih-Wei Lin
  • Patent number: 11923459
    Abstract: A thin film transistor and method of making the same, the thin film transistor including: a substrate; a word line disposed on the substrate; a semiconductor layer disposed on the substrate, the semiconductor layer having a source region, a drain region, and a channel region disposed between the source and drain regions and overlapping with the word line in a vertical direction perpendicular to a plane of the substrate; a hydrogen diffusion barrier layer overlapping with the channel region in the vertical direction; a gate dielectric layer disposed between the channel region and the word line; and source and drain electrodes respectively electrically coupled to the source and drain regions.
    Type: Grant
    Filed: April 12, 2021
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hung Wei Li, Mauricio Manfrini, Sai-Hooi Yeong, Yu-Ming Lin