Abstract: Methods and structure for a semiconductor device is disclosed, which provides a semiconductor device that includes an integral semiconductor fin structure having a middle section defining a channel region of the semiconductor device. The middle section includes an embedded root portion protruding from an insulating surface on a substrate and a suspended overhead portion arranged above the root portion, which is separated from the overhead portion by a predetermined distance. The root portion and the overhead portion respectively define a substantially identical channel direction. The device further includes a gate structure disposed over the fin structure at the middle section. The gate structure wraps around a cross-section of the overhead portion and caps over the protruded portion of the root portion.