Patents Assigned to Taiwan Semiconductor Manufacturing Companym, Ltd.
  • Water mark defect prevention for immersion lithography
    Patent number: 7927779
    Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.
    Type: Grant
    Filed: November 10, 2005
    Date of Patent: April 19, 2011
    Assignee: Taiwan Semiconductor Manufacturing Companym, Ltd.
    Inventor: Ching-Yu Chang