Patents Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COOMPANY LTD.
  • Patent number: 10741537
    Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: August 11, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COOMPANY LTD.
    Inventors: Hsiang-Tai Lu, Shuo-Mao Chen, Mill-Jer Wang, Feng-Cheng Hsu, Chao-Hsiang Yang, Shin-Puu Jeng, Cheng-Yi Hong, Chih-Hsien Lin, Dai-Jang Chen, Chen-Hua Lin