Patents Assigned to Taiwan University
  • Catalyst for fuel cell and method for manufacturing the same
    Patent number: 10529993
    Abstract: A method for manufacturing a catalyst for fuel cell includes: providing or receiving magnesium porphyrin-containing powder; mixing the magnesium porphyrin-containing powder with a carbon-containing carrier powder to form a first mixture, and performing a thermal treatment to pyrolyze the first mixture to form the catalyst for fuel cell. A catalyst for fuel cell is also provided herein.
    Type: Grant
    Filed: December 5, 2017
    Date of Patent: January 7, 2020
    Assignee: NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Sun-Tang Chang, Chen-Hao Wang, Chia-Chi Liu, Huan-Ping Jhong
  • SPINE IMAGE REGISTRATION METHOD
    Publication number: 20190392552
    Abstract: A spine image registration method includes: obtaining a CT image and an MRI image corresponding to a spine; inputting the CT image into a first model to identify at least one first vertebral body of the spine in the CT image; inputting the MRI image to a second model to identify at least one second vertebral body of the spine in the MRI image; marking the first vertebral body with at least one first landmark and marking the second vertebral body with at least one second landmark; matching the first landmark with the second landmark to obtain a corresponding relationship; performing a registration on the CT image and the MRI image according to the corresponding relationship, and generating a registered image according to the content of the CT image and the content of the MRI image located in the same coordinate space; and outputting the registered image.
    Type: Application
    Filed: August 23, 2018
    Publication date: December 26, 2019
    Applicant: National Taiwan University of Science and Technology
    Inventors: Ching-Wei Wang, Hsin-Ya Ko
  • ARTIFICIAL JOINT
    Publication number: 20190388230
    Abstract: An artificial joint includes a first joint assembly and a second joint assembly. The first joint assembly is adapted to be connected to a first bone and has a first contacting surface, wherein the first contacting surface includes a first convex arc surface, a second convex arc surface, and a third convex arc surface. The second joint assembly is adapted to be connected to a second bone and has a second contacting surface, wherein the second contacting surface is in contact with the first contacting surface and includes a first concave arc surface, a second concave arc surface, and a third concave arc surface, and the first concave arc surface, the second concave arc surface, and the third concave arc surface respectively correspond to the first convex arc surface, the second convex arc surface, and the third convex arc surface.
    Type: Application
    Filed: December 19, 2018
    Publication date: December 26, 2019
    Applicants: Industrial Technology Research Institute, National Taiwan University Hospital
    Inventors: Pei-I Tsai, Hsin-Hsin Shen, Kuo-Yi Yang, De-Yau Lin, Yi-Hung Wen, Chih-Chieh Huang, Wei-Luan Fan, Pei-Yu Chen, Ching-Chi Hsu
  • Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
    Patent number: 10515998
    Abstract: A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: December 24, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Jenn-Gwo Hwu, Hao-Hsiung Lin, Chang-Feng Yan, Samuel C. Pan
  • Method for forming stressor, semiconductor device having stressor, and method for forming the same
    Patent number: 10516050
    Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
    Type: Grant
    Filed: March 9, 2017
    Date of Patent: December 24, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Che-Wei Yang, Hao-Hsiung Lin, Samuel C. Pan
  • Bionic fixing apparatus and apparatus for pulling out the same
    Patent number: 10507041
    Abstract: A bionic fixing apparatus is provided. The bionic fixing apparatus includes a body having a through hole and at least one slit. The through hole penetrates the body from the top surface to the bottom surface to form a top opening and a bottom opening. An inner diameter of the top opening is larger than an inner diameter of the bottom opening. The slit is connected to the bottom opening and extends upwardly from the bottom surface of the body, such that the body has a flexible bottom portion.
    Type: Grant
    Filed: November 26, 2014
    Date of Patent: December 17, 2019
    Assignees: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, NATIONAL TAIWAN UNIVERSITY HOSPITAL
    Inventors: Pei-Yi Tsai, Chih-Chieh Huang, Yi-Hung Wen, Hsin-Hsin Shen, Yi-Hung Lin, De-Yau Lin, Jui-Sheng Sun, Chuan-Sheng Chuang, An-Li Chen, Ching-Chih Lin
  • Systems and methods for forming nanowires using anodic oxidation
    Patent number: 10510837
    Abstract: Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: December 17, 2019
    Assignees: Taiwan Semiconductor Manufacturing Company Limited, National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Po-Hao Tseng
  • Method for direct forming stressor, semiconductor device having stressor, and method for forming the same
    Patent number: 10510611
    Abstract: A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor is a grading strained stressor including multiple graded portions formed at graded depths. The first stressor is configured to create one of a graded compressive stress or a graded tensile stress.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: December 17, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Che-Wei Yang, Hao-Hsiung Lin, Samuel C. Pan
  • Semiconductor device and manufacturing method thereof
    Patent number: 10510888
    Abstract: A method of manufacturing a semiconductor device includes forming an alloy semiconductor material layer comprising a first element and a second element on a semiconductor substrate. A mask is formed on the alloy semiconductor material layer to provide a masked portion and an unmasked portion of the alloy semiconductor material layer. The unmasked portion of the alloy semiconductor material layer not covered by the mask is irradiated with radiation from a radiation source to transform the alloy semiconductor material layer so that a surface region of the unmasked portion of the alloy semiconductor material layer has a higher concentration of the second element than an internal region of the unmasked portion of the alloy semiconductor material layer. The surface region surrounds the internal region.
    Type: Grant
    Filed: July 7, 2017
    Date of Patent: December 17, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Fang-Liang Lu, I-Hsieh Wong, Shih-Ya Lin, CheeWee Liu, Samuel C. Pan
  • OLIGOMER-POLYMER AND LITHIUM BATTERY
    Publication number: 20190379046
    Abstract: An oligomer-polymer is provided. The oligomer-polymer is obtained by the polymerization reaction of a compound containing an ethylenically unsaturated group and a nucleophile compound, wherein the nucleophile compound includes the compound shown in formula 1: A lithium battery including an anode, a cathode, an isolation film, an electrolyte solution, and a package structure is also provided, wherein the cathode includes the oligomer-polymer.
    Type: Application
    Filed: August 21, 2019
    Publication date: December 12, 2019
    Applicants: National Taiwan University of Science and Technology, Industrial Technology Research Institute
    Inventors: Fu-Ming Wang, Bing-Joe Hwang, Chorng-Shyan Chern, Jung-Mu Hsu, Jing-Pin Pan, Chang-Rung Yang, Quoc Thai Pham
  • ELECTROLYSIS DEVICE
    Publication number: 20190376201
    Abstract: An electrolysis device including a housing, an electrolysis plate, and a rotating element is provided. The housing has a first surface and a second surface that are opposite to each other. The electrolysis plate disposed in the housing includes a rotating plate, a working electrode, and a counter electrode. The working electrode and the counter electrode are respectively disposed on the rotating plate and separated from each other. The rotating element is pivotally disposed on the rotating plate, so that the electrolysis plate is able to rotate in the housing.
    Type: Application
    Filed: June 6, 2019
    Publication date: December 12, 2019
    Applicant: National Taiwan University of Science and Technology
    Inventors: Chia-Ying Chiang, Yu-Bin Liu
  • Semiconductor device with transition metal dichalocogenide hetero-structure
    Patent number: 10505052
    Abstract: A semiconductor device includes a first film disposed over a semiconductor substrate, the first film comprising a first transition metal dichalcogenide; a second film disposed over the first film, the second film comprising a second transition metal dichalcogenide different from the first transition metal dichalcogenide; source and drain features formed over the second film; a first gate stack formed over the second film and interposed between the source and drain features; and a second gate stack formed over the semiconductor substrate opposite from the first gate stack such that the semiconductor substrate is between the first and second gate stacks.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: December 10, 2019
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Shih-Yen Lin, Chi-Wen Liu, Chong-Rong Wu, Xiang-Rui Chang
  • Antifuse array and method of forming antifuse using anodic oxidation
    Patent number: 10504907
    Abstract: A method for forming an antifuse on a substrate is provided, which comprises: forming a first conductive material on the substrate; placing the first conductive material in an electrolytic solution; performing anodic oxidation on the first conductive material to form a nanowire made of the first conductive material and surrounded by a first dielectric material formed during the anodic oxidation and to form the antifuse on the nanowire; and forming a second conductive material on the antifuse to sandwich the antifuse between the first conductive material and the second conductive material.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: December 10, 2019
    Assignees: Taiwan Semiconductor Manufacturing Company Limited, National Taiwan University
    Inventors: Jenn-Gwo Hwu, Wei-Cheng Tian, Samuel C. Pan, Chao-Hsiung Wang, Chi-Wen Liu
  • Forming semiconductor structures with semimetal features
    Patent number: 10504999
    Abstract: The current disclosure describes semiconductor devices, e.g., transistors including a thin semimetal layer as a channel region over a substrate, which includes bandgap opening and exhibits semiconductor properties. Described semiconductor devices include source/drain regions that include a thicker semimetal layer over the thin semimetal layer serving as the channel region, this thicker semimetal layer exhibiting metal properties. The semimetal used for the source/drain regions include a same or similar semimetal material as the semimetal of the channel region.
    Type: Grant
    Filed: March 15, 2018
    Date of Patent: December 10, 2019
    Assignees: Taiwan Semiconductor Manufacturing Co., Ltd., National Taiwan University
    Inventors: Che-Wei Yang, Hao-Hsiung Lin
  • Low impedance power disc
    Patent number: 10498189
    Abstract: A low impedance power disc is provided. The power disc is connected to a crankshaft of an engine, and includes a rotor, a connecting shaft, and a permanent magnet. The rotor is disposed separately from the permanent magnet. The connecting shaft is locked inside the rotor. A unidirectional bearing is provided and fitted on the connecting shaft. The permanent magnet is fitted on the unidirectional bearing. When the engine is running, the rotor and the permanent magnet are rotated at the same speed to generate electricity and supply the electricity to the vehicle and to charge the battery. When the engine decelerates, the rotor and the connecting shaft are decelerated synchronously with the engine, while the permanent magnet and the unidirectional bearing are continuously rotated at the speed before deceleration in order to facilitate the engine to accelerate again, so that the rotor can be quickly rotated.
    Type: Grant
    Filed: June 14, 2017
    Date of Patent: December 3, 2019
    Assignee: South Taiwan University of Science and Technology
    Inventors: Cho Yu Lee, Jui Hung Chang, Chin Fong Lim
  • Network logic synthesis
    Patent number: 10496773
    Abstract: A system comprises at least one processor configured to perform technology mapping to map logic elements in a logic netlist to corresponding dual-rail modules in a library. The technology mapping results in a network of interconnected nodes and the mapped dual-rail modules are arranged at corresponding nodes of the network. The processor is configured to optimize the network and perform the technology mapping based on at least one satisfiability-don't-care condition. Performance analysis may be performed by calculating a cycle time of a pipeline node in the network based on a calculated pre-charging finish time and an evaluation finish time of a fanin node of the pipeline node.
    Type: Grant
    Filed: January 6, 2017
    Date of Patent: December 3, 2019
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Chi-Chuan Chuang, Yi-Hsiang Lai, Jie-Hong Chiang
  • Method and computing system of allocating registers
    Patent number: 10488911
    Abstract: A method of allocating registers, includes for each of a plurality of live ranges of variables, calculating an energy saving value of each of the plurality of live ranges of the variables; classifying the plurality of live ranges of the variables into a plurality of queues according to the energy saving values of the plurality of live ranges of the variables; and assigning the plurality of live ranges of the variables in the plurality of queues into a plurality of registers.
    Type: Grant
    Filed: November 1, 2016
    Date of Patent: November 26, 2019
    Assignees: National Taiwan University, MEDIATEK INC.
    Inventors: Yuan-Shin Hwang, Jenq-Kuen Lee, Shao-CHung Wang, Li-Chen Kan
  • Peptides for diagnosis and treatment of cancer
    Patent number: 10487119
    Abstract: A method of peptide histochemical diagnosis to detect the peptide binding protein in the cancer tissue is described. This peptide binding specifically to tumor cells is linked to the dextran coated iron oxide nanoparticle. The peptide linked dextran coated iron oxide nanoparticle can be used to bind to the formalin-fixed and paraffin-embedded tumor surgical specimens, and the method of present disclosure can be used to evaluate the efficacy of peptide-targeted chemotherapy for treatment of cancer patients.
    Type: Grant
    Filed: April 26, 2017
    Date of Patent: November 26, 2019
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chin-Tarng Lin, Han-Chung Wu
  • Tunable filter
    Patent number: 10483938
    Abstract: A tunable filter includes a first circuit and a second circuit. In both of them, the first inductor and the second inductor are connected in serial, and further connected with the first capacitor in parallel. The first end of the second capacitor is connected between the first inductor and the second inductor, and the second end of the second capacitor is grounded. The first end of the first capacitor of the first circuit is coupled to the input end of the tunable filter through a first coupling capacitor. The second end of the first capacitor of the first circuit is coupled to the first end of the first capacitor of the second circuit through a second coupling capacitor. The second end of the first capacitor of the second circuit is coupled to the output end of the tunable filter through a third coupling capacitor.
    Type: Grant
    Filed: January 15, 2018
    Date of Patent: November 19, 2019
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chia-Chia Lin, Han-Yun Tsai, Ruey-Beei Wu
  • Electroluminescent devices with improved optical out-coupling efficiencies
    Patent number: 10483496
    Abstract: An electroluminescent (EL) device is disclosed. An optically reflective concave structure includes a first surface and a second surface that lies at an angle relative to the first surface, wherein at least the first and second surfaces are optically reflective. One or more functional layers include a light emitting layer, disposed over the surfaces of the optically reflective concave structure, wherein at least one electroluminescent area of the light emitting layer is defined on the first surface. Especially, the ratio between the diameter of the first surface and the thickness of the one or more functional layers in the optically reflective concave structure is smaller than a constant value.
    Type: Grant
    Filed: August 4, 2017
    Date of Patent: November 19, 2019
    Assignee: NATIONAL TAIWAN UNIVERSITY
    Inventors: Chung-Chih Wu, Chun-Yu Lin, Wei-Kai Lee, Min Jiao, Hoang Yan Lin, Guo-Dong Su