Abstract: A method of bi-layer top surface imaging, comprising the following steps. A structure having a lower layer formed thereover is provided. An upper silicon-containing photoresist layer is formed upon the lower layer. The upper silicon-containing photoresist layer is selectively exposed to form upper silicon-containing photoresist layer exposed portions. The upper silicon-containing photoresist layer exposed portions and the portions of the lower layer below the upper silicon-containing photoresist layer exposed portions are removed using an O2-free N2/H2 plasma etch.
Type:
Grant
Filed:
January 25, 2002
Date of Patent:
April 22, 2003
Assignee:
Taiwon Semiconductor Manufacturing Company
Inventors:
Tsang-Jiuh Wu, Li-Te S. Lin, Li-Chih Chao