Patents Assigned to Takao Hattori
  • Patent number: 5489339
    Abstract: An electrode capable of pushing against a silicon substrate with a constant force is mounted inside a vacuum chamber or a gas-replacing chamber. A bias voltage source can supply a given electrical current between the silicon substrate and the electrode. A temperature-controlled heater and a positioning mechanism are mounted under the silicon substrate. A gas inlet nozzle for adjusting the ambient is mounted close to the location of the substrate.
    Type: Grant
    Filed: March 10, 1994
    Date of Patent: February 6, 1996
    Assignees: Seiko Instruments Inc., Takao Hattori
    Inventors: Takeo Hattori, Masatoshi Yasutake