Abstract: The present invention directed to photonic devices which emit or absorb light with a short wavelength formed using molybdenum oxide grown on substrates which consist of materials selected from element semiconductors, III-V or II-IV compound semiconductors, IV compound semiconductors, organic semiconductors, metal crystal and their derivatives or glasses. New inexpensive photonic devices which emit light with a wavelength from blue to deep ultraviolet rays are realized.

Abstract: The present invention is directed to a new semiconductor film comprising of metal oxide grown on a substrate and its fabrication method. The metal oxide is comprised of molybdenum oxide which is very useful to fabricate electronic devices with high withstand voltages and photonic and electronic hostile-environment devices. An important aspect of the present invention is that the molybdenum oxide film is formed on a substrate made of material which has been used in usual electronic and photonic devices. The most popular material is silicon. Another important aspect of the present invention is a new method to form a molybdenum oxide film on a substrate.

Abstract: A method for manufacturing a semiconductor device comprises evaporating phosphorus on a silicon substrate to form a thin phosphorus layer and growing gallium phosphide on the substrate having the thin phosphorus layer, heterojunction being defined between the substrate and the semiconductor layer only in the region where the thin film had been formed prior to the growth of gallium phosphide.