Abstract: The present invention provides a method of manufacturing silicon and a manufacturing system for manufacturing and extracting silicon by grinding silicon carbide and silica, mixing each at predetermined ratio after cleaning them, housing them in a crucible, heating this by a heating unit to make them react, oxidizing the silicon carbide with the silica and further, reducing the silica with the silicon carbide. The present invention further provides a method of simultaneously manufacturing silicon and silicon carbide and a manufacturing system for producing silicon carbide by forming a silicon carbide film by vapor phase epitaxy using active gas generated in heating for reaction for material and recovering the silicon carbide film.

Abstract: In a heterojunction solar cell, a semiconductor A is bonded to a different conductivity type semiconductor B having an electron affinity a2 which is larger than an electron affinity a1 of the semiconductor A. The semiconductor A and the semiconductor B are lattice-matched to each other with a mismatch ratio of less than 1%, respectively. In a method for fabricating the heterojunction solar cell, the semiconductor A and the semiconductor B are lattice-matched to each other with a mismatch ratio of less than 1% respectively, and the semiconductor A is made of p-type silicon with a p-type germanium layer formed on the surface thereof, and n-type GaP is formed after removing an oxide film by removing the germanium layer.

Abstract: The present invention provides a method of manufacturing silicon and a manufacturing system for manufacturing and extracting silicon by grinding silicon carbide and silica, mixing each at predetermined ratio after cleaning them, housing them in a crucible, heating this by a heating unit to make them react, oxidizing the silicon carbide with the silica and further, reducing the silica with the silicon carbide. The present invention further provides a method of simultaneously manufacturing silicon and silicon carbide and a manufacturing system for producing silicon carbide by forming a silicon carbide film by vapor phase epitaxy using active gas generated in heating for reaction for material and recovering the silicon carbide film.