Abstract: Provided are a purification method and purification apparatus for an alkaline treatment liquid for a semiconductor substrate, which use adsorption purification means that can purify various alkaline treatment liquids to be used for treating semiconductor substrates for various purposes so as to have an ultrahigh purity, in particular, an Fe concentration in a ppq region, and that is excellent in chemical resistance and mechanical strength. The adsorption purification means is purification means for an alkaline treatment liquid for treating a semiconductor substrate for various purposes at the time of producing, for example, a semiconductor substrate or a semiconductor device.

Abstract: Provided is an electrode for electrolysis with excellent corrosion resistance and durability which can be used sustainably in the production of a high-purity quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane on a commercial scale with reduced electric power consumption at low cost. The electrode for electrolysis is useful for the production of a quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane and comprises an electrode base material of an electrically conductive metal, an electrode active layer containing an electrode active material covering the electrode base material, and an intermediate layer of a mixed oxide of an oxide of at least one kind of metal selected from In, Ir, Ta, Ti, Ru, and Nb and an oxide of Sn disposed between the electrode base material and the electrode active layer.

Abstract: Provided is an electrode for electrolysis with excellent corrosion resistance and durability which can be used sustainably in the production of a high-purity quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane on a commercial scale with reduced electric power consumption at low cost. The electrode for electrolysis is useful for the production of a quaternary ammonium hydroxide by the electrolysis of a quaternary ammonium inorganic acid salt in an electrolytic cell partitioned by a cation exchange membrane and comprises an electrode base material of an electrically conductive metal, an electrode active layer containing an electrode active material covering the electrode base material, and an intermediate layer of a mixed oxide of an oxide of at least one kind of metal selected from In, Ir, Ta, Ti, Ru, and Nb and an oxide of Sn disposed between the electrode base material and the electrode active layer.

Abstract: To provide an abrasive slurry having high dispersion stability, including: abrasive fine particles made of one or more kinds of oxides; colloidal fine particles made of colloidal oxide with an average particle size smaller than an average particle size of the abrasive fine particles; and a dispersion medium in which the abrasive fine particles and the colloidal fine particles are dispersed, and a manufacturing method for a substrate as an inorganic substrate, including polishing the substrate using the abrasive slurry. An abrasive slurry according to the present invention keeps high dispersion stability for a long time and shows a satisfactory redispersion property, which can eliminate a problem about precipitation/aggregation as much as possible and can be used as a dispersant-free abrasive containing absolutely no organic dispersant.

Abstract: An electronic device substrate, such as a semiconductor silicon wafer or a liquid crystal glass substrate, with a surface which has just undergone cleaning treatment and which is covered with a clean oxide or nitride film which will readily adsorb organic contaminants is treated with an aqueous solution containing choline, or alternatively a similar substrate which has not been cleaned is treated with a treatment solution comprising a SC-1 solution to which choline has been added. Following drying, a surface concentration of choline of between 5×1010 molecules˜7×1012 molecules/cm2 is adsorbed onto the substrate surface. This treatment suppresses organic contamination of the substrate from the atmosphere. As a result, the surface carbon concentration of an electronic device substrate can be suppressed to a value of no more than approximately 3×1013 atoms/cm2, even for manufacturing processes carried out in typical clean rooms with no chemical filters installed.

Abstract: The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.

Abstract: The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.

Abstract: An apparatus of this invention for supplying an abrasive for use in the manufacture of semiconductors comprises a storage tank of the abrasive and a supply line for guiding the abrasive from the storage tank to a nozzle for supplying the abrasive to an object to be polished and said storage tank or supply line is provided with a device for furnishing ultrasonic wave to sonicate the abrasive. A process of this invention for supplying an abrasive for use in the manufacture of semiconductors comprises sonicating the abrasive by ultrasonic wave before supplying it to an object to be polished. The apparatus and process of this invention for supplying an abrasive for use in the manufacture of semiconductors make it possible to supply an abrasive containing a minimized amount of abnormally agglomerated particles to the surface of an object to be polished in the manufacturing step of semiconductors and improve the yield of polished products.

Abstract: A process which comprises reacting a high molecular weight polyorganosiloxane or a composition containing the same with an alkoxysilane and/or a partially hydrolyzed condensate thereof at a temperature of lower than 300.degree. C. in the presence of an alcoholate compound and recovering the resulting organoalkoxysilane and, in addition thereto, at least one of a distillable polyorganosiloxane low molecular weight compound, a non-volatile liquid polyorganosiloxane and a silica; and a process which comprises reacting a high molecular weight polyorganosiloxane or a composition containing the same with an alcoholate compound at a temperature of 50.degree. to 150.degree. C. in an anhydrous state and recovering the resulting distillable polyorganosiloxane low molecular weight compound and, in addition thereto, at least one of an organoalkoxysilane and a non-volatile liquid polyorganosiloxane.

Abstract: This invention provides a process for preparing a refractory molded article comprising the steps of (a) forming a molded article matrix from an aggregate and the first binder, (b) impregnating the molded article matrix formed in step (a) with the second binder consisting of an alcoholic solution of one kind or two or more kinds of metal alkoxides selected from alkoxides of metals of Group 4A or Group 4B (excepting carbon) and Group 3A or Group 3B of the periodic table and their partial hydrolysates and an alkaline compound of alkali metal or alkaline earth metal (one kind or a mixture of two or more kinds selected from alkoxides, hydroxides and salts of the metal) and (c) drying and firing the molded article matrix at high temperature and also provides a binder for the preparation of such refractory molded article.

Abstract: This invention provides a process for preparing a refractory molded article comprising the steps of (a) forming a molded article matrix from an aggregate and the first binder, (b) impregnating the molded article matrix formed in step (a) with the second binder consisting of an alcoholic solution of one kind or two or more kinds of metal alkoxides selected from alkoxides of metals of Group 4A or Group 4B (excepting carbon) and Group 3A or Group 3B of the periodic table and their partial hydrolysates and an alkaline compound of alkali metal or alkaline earth metal (one kind or a mixture of two or more kinds selected from alkoxides, hydroxides and salts of the metal) and (c) drying and firing the molded article matrix at high temperature and also provides a binder for the preparation of such refractory molded article.

Abstract: The invention is a method of processing a waste liquid containing at least an organic quaternary ammonium hydroxide. The waste liquid is brought into contact with a cation-exchanging material so as to make the organic quaternary ammonium ions adsorbed by the material to thereby remove the ions from the liquid (adsorbing step), and optionally the cation-exchanged water obtained by the contact is again processed to separate and remove resist peelings and surfactants therefrom. The invention is also a method of processing the organic quaternary ammonium hydroxide-containing waste liquid for recovering a valuable substance of the organic quaternary ammonium hydroxide therefrom.

Abstract: This invention relates to a process for preparing dialkyl carbonates by the reaction of one kind or a mixture of two or more kinds selected from urea, methyl carbamate and ethyl carbamate with methanol and/or ethanol in the presence of a catalyst under pressure at 100.degree. to 250.degree. C. and the process does not use poisonous phosgene or carbon monoxide as raw material and readily yields dimethyl carbonate and diethyl carbonate in simple equipment.

Abstract: The invention is a method of processing a waste liquid containing at least an organic quaternary ammonium hydroxide. The waste liquid is brought into contact with a cation-exchanging material so as to make the organic quaternary ammonium ions adsorbed by the material to thereby remove the ions from the liquid (adsorbing step), and optionally the cation-exchanged water obtained by the contact is again processed to separate and remove resist peelings and surfactants therefrom. The invention is also a method of processing the organic quaternary ammonium hydroxide-containing waste liquid for recovering a valuable substance of the organic quaternary ammonium hydroxide therefrom.

Abstract: This invention relates to a process for preparing alkoxysilanes of the general formula (R.sup.2) .sub.a SiH(OR.sup.1).sub.b in which R.sup.1 is a lower alkyl group with 1 to 6 carbon atoms, R.sup.2 is an aliphatic or aromatic hydrocarbon radical with 1 to 8 carbon atoms, a is 0 or 1, and b is 2 or 3 by the reaction of metallic silicon, an alcohol, and an acetal and/or an orthocarboxylic acid ester in the presence of a copper catalyst and provides a novel process for preparing directly and advantageously alkoxysilanes having one hydrogen atom linked to the silicon atom, particularly alkyldialkoxysilanes and trialkoxysilanes.

Abstract: A cathode ray tube according to the present invention has a sufficient antistatic property which can be obtained by forming a glass film containing SiO.sub.2 or P.sub.2 O.sub.5 as a main component and a hygroscopic metal salt on the outer surface of its front panel.

Abstract: A distillable liquid containing non-volatile impurities is freed of those impurities by boiling the liquid to form vapors of the liquid, passing the vapors through a packed column heated to a temperature such that liquid entrained in the vapors is completely vaporized and the non-volatile impurities remain in the packed column, and condensing the vapors from the column.

Abstract: According to the invention, an antistatic/anti-reflecting film of high adhesive strength can be formed easily by forming an SiO.sub.2 film on a cathode-ray tube faceplate by means of a condensation reaction of polyalkyl siloxane consisting essentially of condensed alkyl silicates. As a result, the sintering conditions for forming an antistatic/anti-reflecting film can be set adequately. The antistatic effect can be further enhanced, reflection of the external light can be decreased, and workability can be greatly improved.

Abstract: A method of producing synthetic silica which is characterized by hydrolyzing a tetraalkoxysilane under a basic condition in the presence of an ammonium salt.

Abstract: An aqueous quaternary ammonium hydroxide solution is produced by a method which is characterized by the steps of synthesizing an inorganic acid salt of quaternary ammonium by the reaction of a trialkylamine with a dialkyl carbonate and the electrolyzing the inorganic acid salt with an electrolytic cell using a cation-exchange membrane as a diaphragm thereby producing quaternary ammonium hydroxide.