Patents Assigned to Tampere University Foundation sr
  • Patent number: 12123060
    Abstract: Disclosed herein is Differential Subclone Eradication and Resistance Analysis (DSER), a method developed to identify molecular targets for improved therapy by direct comparison of genomic features of eradicated and resistant subclones in pre- and post-treatment samples from a patient with BRCA2-deficient metastatic prostate cancer. FANCI and EYA4 were identified as candidate DNA repair-related targets for converting subclones from resistant to eradicable, and RNAi-mediated depletion of FANCI confirmed it as a potential target. The EYA4 alteration was associated with adjacent L1 transposon insertion during cancer evolution upon treatment. L1 activation was inhibited by the antiretroviral drug azidothymidine. In conclusion DSER provides an informative intermediate step toward effective precision cancer medicine, especially in cases with dramatic but temporary metastatic tumor regression.
    Type: Grant
    Filed: October 6, 2021
    Date of Patent: October 22, 2024
    Assignee: Tampere University Foundation sr
    Inventors: George Steven Bova, Matti Nykter
  • Patent number: 11688996
    Abstract: A semiconductor device includes a substrate comprising a layer made of Ge and a semiconductor multilayer structure grown on the layer made of Ge. The semiconductor multilayer structure includes at least one first layer comprising a material selected from a group consisting of AlxGa1-xAs, AlxGa1-x-yInyAs, AlxGa1-x-yInyAs1-zPz, AlxGa1-x-yInyAs1-zNz, and AlxGa1-x-yInyAs1-z-cNzPc, AlxGa1-x-yInyAs1-z-cNzSbc, and AlxGa1-x-yInyAs1-z-cPzSbc, wherein for any material a sum of the contents of all group-III elements equals 1 and a sum of the contents of all group-V elements equals 1. The semiconductor multilayer structure also includes at least one second layer comprising a material selected from a group consisting of GaInAsNSb, GaInAsN, AlGaInAsNSb, AlGaInAsN, GaAs, GaInAs, GaInAsSb, GaInNSb, GaInP, GaInPNSb, GaInPSb, GaInPN, AlInP, AlInPNSb, AlInPN, AlInPSb, AlGaInP, AlGaInPNSb, AlGaInPN, AlGaInPSb, GaInAsP, GaInAsPNSb, GaInAsPN, GaInAsPSb, GaAsP, GaAsPNSb, GaAsPN, GaAsPSb, AlGaInAs and AlGaAs.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: June 27, 2023
    Assignee: Tampere University Foundation, sr.
    Inventors: Arto Aho, Riku Isoaho, Antti Tukiainen, Mircea Dorel Guina, Jukka Viheriälä
  • Publication number: 20230104563
    Abstract: Disclosed herein is Differential Subclone Eradication and Resistance Analysis (DSER), a method developed to identify molecular targets for improved therapy by direct comparison of genomic features of eradicated and resistant subclones in pre- and post-treatment samples from a patient with BRCA2-deficient metastatic prostate cancer. FANCI and EYA4 were identified as candidate DNA repair-related targets for converting subclones from resistant to eradicable, and RNAi-mediated depletion of FANCI confirmed it as a potential target. The EYA4 alteration was associated with adjacent L1 transposon insertion during cancer evolution upon treatment. L1 activation was inhibited by the antiretroviral drug azidothymidine. In conclusion DSER provides an informative intermediate step toward effective precision cancer medicine, especially in cases with dramatic but temporary metastatic tumor regression.
    Type: Application
    Filed: October 6, 2021
    Publication date: April 6, 2023
    Applicant: Tampere University Foundation sr
    Inventors: George Steven BOVA, Matti NYKTER
  • Patent number: 11391675
    Abstract: An optically transparent matrix including a molecule containing a hydroxyazobenzene group or its derivative embedded in the matrix. An optical system including the optically transparent matrix, an isomerizing light source, and one or more light detector(s) for measuring absorbance changes from the optically transparent matrix. A method for measuring the quantity of hydrogen bonding gaseous molecules.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: July 19, 2022
    Assignee: Tampere University Foundation sr
    Inventors: Mikko Poutanen, Arri Priimägi, Olli Ikkala
  • Patent number: 10856410
    Abstract: A stretchable structure comprises or is configured to receive a conductive path and an interface region. The interface region comprises a peripheral line comprising at least one inwardly curved portion, such as an “inverted teardrop” or a fjord like recess pointing essentially towards the center area of the interface region. The interface region is arranged to receive said stretchable conductive path via said inwardly curved portion of said peripheral line of said interface region. In this way the interface region minimizes strains or other twisting or stretching forces directed to the conductor entering into the opening of the inwardly curved portion of the interface region.
    Type: Grant
    Filed: September 25, 2017
    Date of Patent: December 1, 2020
    Assignee: Tampere University Foundation sr
    Inventors: Pekka Iso-Ketola, Jukka Vanhala, Matti Mäntysalo