Abstract: There is provided a palladium-coated copper bonding wire that does not cause a shrinkage cavity during first bonding, has high bonding reliability, and is capable of maintaining excellent bonding reliability for a long period of time even in high-temperature and high-humidity environments. A palladium-coated copper bonding wire in which a concentration of palladium is 1.0 mass % or more and 4.0 mass % or less relative to the total of copper, palladium, and a sulfur group element, a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of sulfur is 5 mass ppm or more and 12 mass ppm or less, a concentration of selenium is 5 mass ppm or more and 20 mass ppm or less, or a concentration of tellurium is 15 mass ppm or more and 50 mass ppm or less, and the palladium-coated copper bonding wire including a palladium-concentrated region with the average concentration of palladium of 6.5 atom % or more and 30.

Abstract: A palladium-coated copper bonding wire includes: a core material containing copper as a main component; and a palladium layer on the core material, in which a concentration of palladium relative to the entire wire is 1.0 mass % or more and 4.0 mass % or less, and a work hardening coefficient in an amount of change of an elongation rate 2% or more and a maximum elongation rate ? max % or less of the wire, is 0.20 or less.

Abstract: An aluminum wire with which, at the time of bonding a bonding wire for a power semiconductor, the wire is not detached from a wedge tool, and a long life is achieved in a power cycle test. The aluminum wire is made of an aluminum alloy having an aluminum purity of 99 mass % or more and contains, relative to a total amount of all elements of the aluminum alloy, a total of 0.01 mass % or more and 1 mass % or less of iron and silicon. In a lateral cross-section in a direction perpendicular to a wire axis of the aluminum wire, an orientation index of is 1 or more, an orientation index of is 1 or less, and an area ratio of precipitated particles is in a range of 0.02% or more to 2% or less.

Abstract: The bonding wire being a Pd-coated copper bonding wire includes: a copper core material; and a Pd layer and containing a sulfur group element, in which with respect to the total of copper, Pd, and the sulfur group element, a concentration of Pd is 1.0 mass % to 4.0 mass % and a total concentration of the sulfur group element is 50 mass ppm or less, and a concentration of S is 5 mass ppm to 2 mass ppm, a concentration of Se is 5 mass ppm to 20 mass ppm, or a concentration of Te is 15 mass ppm to 50 mass ppm or less. A wire bonding structure includes a Pd-concentrated region with the concentration of Pd being 2.0 mass % or more relative to the total of Al, copper, and Pd near a bonding surface of an Al-containing electrode of a semiconductor chip and a ball bonding portion.

Abstract: A noble metal-coated silver bonding wire suppresses corrosion at the bonding interface under severe conditions of high temperature and high humidity, and the noble metal-coated silver bonding wire can be ball-bonded in the air. The noble metal-coated silver wire for ball bonding is a noble metal-coated silver wire including a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes a palladium intermediate layer and a gold skin layer, the palladium content relative to the entire wire is 0.01 mass % or more and 5.0 mass % or less, the gold content relative to the entire wire is 1.0 mass % or more and 6.0 mass % or less, and the sulfur group element content relative to the entire wire is 0.1 mass ppm or more and 100 mass ppm or less.

Abstract: A gold-coated silver bonding wire includes: a core material containing silver as a main component; and a coating layer provided on a surface of the core material and containing gold as a main component. The gold-coated silver bonding wire contains gold in a range of not less than 2 mass % nor more than 7 mass %, and at least one sulfur group element selected from the group consisting of sulfur, selenium, and tellurium in a range of not less than 1 mass ppm nor more than 80 mass ppm, with respect to a total content of the bonding wire.

Abstract: A noble metal-coated silver bonding wire for ball bonding wire includes a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes at least one palladium layer, the total palladium content relative to the entire wire is not less than 0.01 mass % and not more than 5.0 mass %, and the total sulfur group element content relative to the entire wire is not less than 0.1 mass ppm and not more than 100 mass ppm.

Abstract: A palladium coated copper wire for ball bonding includes a core formed of pure copper or copper alloy having a purity of 98% by mass or more, and a palladium draw coated layer coated on the core. The copper wire has a diameter of 10 to 25 ?m, and the palladium drawn layer contains sulfur, phosphorus, boron or carbon.

Abstract: A bonding wire for a high-speed signal line for connecting a pad electrode of a semiconductor device and a lead electrode on a circuit board contains palladium (Pd), platinum (Pt), silver (Ag), and a trace additive element.

Abstract: The silver-gold alloy bonding wire of the present invention includes an alloy composed of not lower than 10% and not higher than 30% of gold (Au) and not lower than 30 ppm and not higher than 90 ppm of calcium (Ca) with the remainder of silver (Ag) at purity relative to a metallic element except for elements Au and Ca of 99.99% or higher, in mass percentage; a layer enriched with oxygen (O) and calcium (Ca) formed as a surface layer on the surface of the alloy; and a gold-enriched layer formed immediately below the surface layer.

Abstract: An Ag—Au—Pd ternary alloy bonding wire for semiconductor devices made from 4-10 mass % of gold having a purity of 99.999% or higher, 2-5 mass % of palladium having a purity of 99.99% or higher, and remaining mass % of silver (Ag) having a purity of 99.999% or higher; and this wire contains 15-70 mass ppm of oxidizing non-noble metallic elements, and is thermally annealed before being continuously drawn through dies, and is thermally tempered after being continuously drawn through the dies, and this wire is useful for ball bonding in a nitrogen atmosphere; Ag2Al and a Pd rich layer produced in the interface between the Ag—Au—Pd ternary alloy wire and an aluminum pad suppress the corrosion development between the Ag2Al intermetallic compound layer and the wire.

Abstract: An object is to provide a bonding wire for a high-speed signal line, formed by an Ag—Pd—Pt three-element alloy or an Ag—Pd—Pt ternary alloy, that is able to transmit a stable super-high frequency signal in a several GHz band, and that does not have a strong silver sulfide (Ag2S) film even when an unstable silver sulfide layer is formed on the surface of the bonding wire. Provided is the bonding wire for the high-speed signal line formed by a three-element alloy containing 0.8 to 2.5 mass % of palladium (Pd), 0.1 to 0.7 mass % of platinum (Pt), and a balance being silver (Ag) with purity of 99.99 mass % or more, or a ternary alloy obtained by adding a trace element to the three-element alloy, in which cross section of the bonding wire is formed by a skin film and a core, and in which a surface segregation layer containing highly-concentrated silver (Ag) is present in the skin film of the silver alloy.

Abstract: [Problem to be Solved]The invention providesa bonding ribbon which can guarantee a uniform fusing over the entire joint area throughout hundreds of thousands of continuous ultrasonic bonding cycles and which can realize an improved bonding strength and which also can avoid being broken while it is looped.

Abstract: An Au bonding wire for semiconductor device, comprising a wire-shaped Au alloy material consisting of: 3-15 mass ppm of Be, 3-40 mass ppm of Ca, 3-20 mass ppm of La, 3-20 mass ppm of at least one functional element selected from the group of Ce, Eu, Mg, and Si, and the remainder of Au, wherein the diameter of said Au alloy bonding wire is less than 23 microns, wherein said bonding wire has improved roundness of compressed bonded ball and improved fracture stress.

Abstract: To acquire the best combination of elongation and break strength on the Au alloy bonding wire. Adding 0.5-30 wt % of at least one element among Cu, Ag, Pd and Pt to high purity Au, a flat area about elongation ratio change appears between the range of 450-650° C. of heat-treatment temperature at wire drawing. Though the wire strength becomes decrease at this range of temperature, the strength is maintained at higher level against the heat treatment temperature of a standard elongation ratio of 4% of high purity Au alloy wire. Therefore, by the heat treatment of this flat range, Au alloy bonding wire, which has certain level of strength regardless of the temperature change, is acquired. Moreover, by selecting appropriate temperature range, different strength characteristics wires corresponding to the elongation ratio are acquired.

Abstract: An Ag—Au—Pd ternary alloy bonding wire for semiconductor devices made from 4-10 mass % of gold having a purity of 99.999 mass % or higher, 2-5 mass % of palladium having a purity of 99.99 mass % or higher, and remaining mass % of silver (Ag) having a purity of 99.999 mass % or higher; and this wire contains 15-70 mass ppm of oxidizing non-noble metallic elements, and is thermally annealed before being continuously drawn through dies, and is thermally tempered after being continuously drawn through the dies, and this wire is useful for ball bonding in a nitrogen atmosphere; Ag2Al and a Pd rich layer produced in the interface between the Ag—Au—Pd ternary alloy wire and an aluminum pad suppress the corrosion development between the Ag2Al intermetallic compound layer and the wire.

Abstract: [Issues to be Solved] To provide an aluminum ribbon for ultrasonic bonding, is able to realize the high bonding strength and is able to maintain defined level of bonding strength, during several ten thousand bonding cycles. [Means to be Solved] An aluminum ribbon for ultrasonic bonding is consisted aluminum metal or aluminum based alloy, the purity of aluminum is more than 99.99 wt %, and total amount of organic carbon non-ionic surfactant less than 500 molecular weight vaporized and adhered is 100-1,000 ?g/m2 on the mirror finished bright surface of aluminum ribbon.

Abstract: [Issues to be Solved] Second bonding failures caused by attached oxide of additive elements on high purity Au bonding wire are to be resolved. [Solution Means] Au alloy bonding wires comprising: 5-100 wt ppm Mg, 5-20 wt ppm In, 5-20 wt ppm Al, 5-20 wt ppm Yb, and residual Au of 99.995 wt % purity or higher, and adding 5-20 wt ppm Ca, and for these alloys adding at least one element among 5-20 wt ppm La, 5-20 wt ppm Lu, 5-100 wt ppm Sn, 5-100 wt ppm Sr to the alloy, and/or, moreover, adding 0.01-1.2 wt % Pd to these alloys. Bonding wire, which contains these trace additive elements do not cause a disturbance by accumulated contamination, because of contamination, which formed at ball formation by micro discharge and at the first bonding on the tip of the capillary, transferring to the wire at second bonding.

Abstract: There is provided a gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, and high resin flowability resistance. The gold alloy wire for a bonding wire comprises one kind or two kinds of Pt and Pd of 1000 to less than 5000 ppm in total, Ir: 1 to 200 ppm, Ca: 20 to 100 ppm, Eu: 10 to 100 ppm, Be: 0.1 to 20 ppm, if necessary, and La: 10 to 100 ppm, if necessary. The total amount of at least two kinds of Ca, Eu, Be, and La is in a range of 50 to 250 ppm.

Abstract: [Issues to be Solved] To provide Au alloy wire for ball bonding, which is superior in wire strength, and also is superior in formability of molten ball and roundness of compressed ball. Moreover it is superior at stitch bondability, and is available for high density wiring of semiconductor devices. [Solution Means] An Au alloy wire for ball bonding comprising: 15-50 wt ppm Mg, 10-30 wt ppm Ca, 5-20 wt ppm Eu, 5-20 wt ppm Y, 5-20 wt ppm La and residual Au is 99.998 wt % purity or higher, moreover, purity of more than 99.98 wt % Au. The mass of additive Ca is less than the value of total amount of additive Eu and additive La, and the mass of additive Y is less than the value of the total amount of additive Ca and additive Eu, and the mass of Mg is 20-40 wt ppm.