Abstract: An object of the present invention consists in providing a new spool case in which the stored spool can be held without contacting with it by hand, engaging or disengaging of the spool in respect to the bonding device can be carried out without having any relation with a length of the holder or presence or non-presence of an engaging means, a reliability in holding the spool is high and a spool held state can be easily maintained. In addition, solving means of the present invention can be handled such that the spool is held by the engaging pieces 7 arranged at the base 3 and the spool is not directly contacted with hand. The spool held state is maintained by the resilient engaging force of each of the engaging pieces 7 and this is not released so long as each of these engaging pieces 7 is not resiliently deformed and is not released from the flange.

Abstract: According to the present invention provided is a gold wire for IC chip bonding which wire is unlikely to be broken after thermosonic wire bonding at an increased ultrasonic output, subsequent reverse deformation involving severe bonding and deformation of a ball neck portion and formation of a loop. The bonding gold wire essentially consists of 0.0001-0.005 wt % of Pt, 0.0001-0.005 wt % of Ag, 0.0005-0.005 wt % of Mg and 0.00005-0.005 wt % of Eu; with the balance being Au, said Au having less than 0.001% by weight of incidental impurity.

Abstract: A method of electrically connecting a semiconductor package to a substrate by using bump contacts formed by heating the tip of an alloy wire and directly joined to aluminum alloy wiring lines, an alloy wire for such a purpose, and a semiconductor device constructed by electrically connecting a semiconductor package to a substrate by such a method. The alloy wire is produced by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additive elements. The tip of the alloy wire is heated to form a ball to be joined to the aluminum alloy wiring line as a bump contact. The Brinell hardness number of the ball is H.sub.B 6 or higher.

Abstract: A bonding wire for a semiconductor device contains high purity Pd or Pd alloy as a base metal and 25-10000 atppm of low boiling element III having a boiling point lower than a melting point of the base metal and soluble in Pd, or contains high purity Pd or Pd alloy as a base metal and 5-500 atppm of low boiling point element IV having a boiling point lower than a melting point of the base metal and insoluble in Pd, or high purity Pd or Pd alloy as a base metal, and 5-10000 atppm of low boiling point element III and low boiling point element IV, the low boiling point element III having a boiling point lower than a melting point of the base metal and being soluble in Pd, the low boiling point element IV having a boiling point lower than a melting point of the base metal and being insoluble in Pd, the low boiling elements III and IV being present in a concentration so that (content of the low boiling point element III)/25 + (content of the low boiling element IV)/5.gtoreq.1.gtoreq.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: This invention relates to a connection method for a semiconductor material enabling a formation of a bump electrode with a wire bonder, keeping always a cutting position of the wire at a specified position and improving a continuous workability and stability and to a connection material to be used in the connecting method, wherein any one of Pb, Sn, In is applied as a major element and the alloy having additive elements mixed with it is made as a fine wire under a rapid cooling and condensation process and further to a semiconductor device made by the above-mentioned connecting method.

Abstract: A method of electrically connecting a semiconductor package to a substrate by using bump contacts formed by heating the tip of an alloy wire and directly joined to aluminum alloy wiring lines, an alloy wire for such a purpose, and a semiconductor device constructed by electrically connecting a semiconductor package to a substrate by such a method. The alloy wire is produced by drawing an alloy material produced by quench solidifying an alloy containing Pb, Sn or In as a principal element, and an additive element or additives elements. The tip of the alloy wire is heated to form a ball to be joined to the aluminum alloy wiring line as a bump contact. The Brinell hardness number of the ball is H.sub.B 6 or higher.

Abstract: A clad bonding wire for electrically connecting the bonding pad of a semiconductor device to an external lead comprises a core wire formed on one of high-purity Pd or a Pd alloy, high-purity Au or a Au alloy, high-purity Pt or a Pt alloy, and high-purity Ag or a Ag alloy, and a cladding cladding the core wire and formed of another one of the foregoing materials other than that forming the core wire. The wire-to-cladding diameter ratio D.sub.2 /D.sub.1 is in the range of 15% to 60% or 85% to 99. When the tip of the clad bonding wire is heated to form a ball, part of the core wire and part of the cladding in a neck formed behind the ball diffuse into each other to form an alloy of the materials forming the core wire and the cladding between the core wire and the cladding to enhance the mechanical strength of the neck beyond that of other portion of the clad bonding wire.

Abstract: Bonding wire for a semiconductor device contains high purity Au or Au alloy as a base metal and 25-10000 atppm of low boiling point element I having a boiling point lower than a melting point of the base metal and soluble in Au, or contains high purity Au or Au alloy as a base metal and 5-500 atppm of low boiling point element II having a boiling point lower than a melting point of the base metal and insoluble in Au, or contains high purity Au or Au alloy as a base metal and 5-10000 atppm of a mixture of low boiling point element I having a boiling point lower than a melting point of the base metal and soluble in Au and low boiling point element II having a boiling point lower than the melting point of the base metal and insoluble in Au under the condition of (content of the low boiling point element I)/25+(content of the low boiling point element II)/5.gtoreq.1.gtoreq.(content of the low boiling point element I)/10000+(content of the low boiling point element II)/500.

Abstract: This invention relates to a wire bonding gold line used for connecting a semiconductor tip electrode with an outside lead portion. This gold wire characteristically contains gold (Au) having a purity level 99.996-99.9995 wt % and 0.0032-0.008 wt % by total weight of said gold wire of germanium (Ge) so that the electric resistance of the wire bonding gold line is reduced, while the mechanical strength such as tensile strength and high temperature strength is excellent and a gold ball can be shaped into the form of a nearly perfect sphere in the connection of the tip electrode.

Abstract: A bonding gold wire for semiconductor elements comprising a gold alloy containing silver (Ag), calcium (Ca), iron (Fe), and magnesium (Mg) with or without an additional element selected from the group consisting of germanium, beryllium, gallium, and thallium, with the substantial balance being gold.