Abstract: This method includes: generating a backscattered-electron image of a multilayered structure (400) including a plurality of patterns formed in a plurality of layers by a scanning electron microscope (50); classifying a plurality of regions of a virtual multilayered structure (300) including a CAD pattern created from design data of the plurality of patterns into a plurality of groups according to CAD pattern arrays in a depth direction of the virtual multilayered structure (300); performing a matching between at least one of the plurality of patterns on the backscattered-electron image and a corresponding CAD pattern; calculating a brightness index value of a region on the backscattered-electron image corresponding to a region belonging to each group; and determining that there is a pattern defect in the region on the backscattered-electron image when the brightness index value is out of a standard range.

Abstract: The method includes: determine a first integrated value by integrating measured values of widths of reference patterns (210A) belonging to a first group; determine a second integrated value by integrating measured values of widths of reference patterns (210B) belonging to a second group; performing second matching between patterns on an image of a second region and corresponding CAD patterns; determining a third integrated value by integrating measured values of widths of patterns (220A) belonging to a first group; determining a fourth integrated value by integrating measured values of widths of patterns (220B) belonging to a second group; and determining that the second matching has been performed correctly when the magnitude relationship between the third integrated value and the fourth integrated value coincides with the magnitude relationship between the first integrated value and the second integrated value.

Abstract: The present invention relates to a scanning electron microscope configured to scan a workpiece, such as a wafer, mask, panel, or substrate, with an electron beam to generate an image of the workpiece. The scanning electron microscope includes a deflector (17, 18) configured to deflect the electron beam to scan a target region (T) on the workpiece (W) with the electron beam, and a deflection controller (22) configured to apply to the deflectors (17, 18) a scanning voltage that causes the electron beam to scan the target region (T) and an offset voltage that shifts the electron beam from an optical axial center (O) to the target region (T).

Abstract: The present invention relates to a method of detecting an edge (or a contour line) of a pattern, which is formed on a workpiece (e.g., a wafer or a mask) for use in manufacturing of semiconductor, from an image generated by a scanning electron microscope. The pattern-edge detection method includes: generating an objective image of a target pattern formed on a workpiece; generating a feature vector representing features of each pixel constituting the objective image; inputting the feature vector to a model constructed by machine learning; outputting, from the model, a determination result indicating whether the pixel having the feature vector is an edge pixel or a non-edge pixel; and connecting a plurality of pixels, each having a feature vector that has obtained a determination result indicating an edge pixel, with a line to generate a virtual edge.

Abstract: A method of generating a correction line indicating a relationship between an amount of deviation of an edge of a wafer pattern from an edge of a reference pattern and a width of a space adjacent to the edge of the reference pattern, includes: creating an appearance-frequency graph of widths of spaces adjacent to reference patterns located within a designated area; obtaining images of wafer patterns corresponding to a plurality of space widths shown in the appearance-frequency graph; calculating amounts of deviation between edges of the wafer patterns on the images and edges of corresponding reference patterns; plotting a plurality of data points on a coordinate system, the plurality of data points being specified by the plurality of space widths and the amounts of deviation; and generating a correction line from the plurality of data points on the coordinate system.

Abstract: The present invention relates to a pattern edge detection method applicable to a semiconductor inspection apparatus that performs a pattern inspection using pattern design data. This method includes: generating an image of a pattern; detecting an edge of the pattern on the image based on a reference pattern generated from design data for the pattern; repeating generating of an image of a pattern and detecting of an edge of the pattern on the image to produce training-data candidates including a plurality of images and corresponding pattern edges; determining training data by removing pattern edges and corresponding images from the training-data candidates, the pattern edges to be removed being pattern edges satisfying a predetermined disqualification condition; producing an edge detection model by machine learning using the training data; generating an image of other pattern; and detecting an edge of the other pattern on the image using the edge detection model.

Abstract: The present invention relates to an autofocus technique for a scanning electron microscope using interlaced scan. The autofocus method for a scanning electron microscope, includes: generating a thinned image of a pattern (160) formed on a surface of a specimen by repeatedly scanning the specimen with an electron beam while shifting a scanning position of the electron beam by predetermined plural pixels in a direction perpendicular to a scanning direction; performing said generating a thinned image of the pattern (160) plural times, while changing a focal position and an irradiation position of the electron beam, to generate thinned images of the pattern (160); calculating a plurality of sharpness levels of the respective thinned images; and determining an optimum focal position based on the sharpness levels.

Abstract: The present invention relates to an apparatus and method for analyzing the energy of backscattered electrons generated from a specimen. The apparatus includes: an electron beam source (101) for generating a primary electron beam; an electron optical system (102, 105, 112) configured to direct the primary electron beam to a specimen while focusing and deflecting the primary electron beam; and an energy analyzing system configured to detect an energy spectrum of backscattered electrons emitted from the specimen.

Abstract: A pattern defect detection method capable of detecting a pattern defect of a semiconductor integrated circuit with higher accuracy is disclosed.

Abstract: A method which can generate a clear image of a specimen by correcting an image drift is disclosed. The image generation method includes: scanning a specimen with an electron beam to generate images; calculating amounts of image drift within specific regions of the respective images; calculating continuous amounts of image drift by interpolation from the amounts of image drift; determining an amount of image drift at each pixel of the images from the continuous amounts of image drift; correcting the images by correcting a brightness of each pixel based on the amount of image drift at each pixel; and generating a synthetic image from the corrected images.