Abstract: A semiconductor device includes a substrate, a fin structure disposed over the substrate and including a channel region and a source/drain region, a gate structure disposed over at least a portion of the fin structure, the channel region being beneath the gate structure and the source/drain region being outside of the gate structure, a strain material layer disposed over the source/drain region, the strain material layer providing stress to the first channel region, and a contact layer wrapping around the first strain material layer. A width of the source/drain region is smaller than a width of the channel region.

Abstract: A method and system for reducing acidic contamination on a process wafer following a plasma etching process including; providing an ambient controlled heating chamber for accepting transfer of a process wafer under controlled ambient conditions; transferring the process wafer to the heating chamber under controlled ambient conditions following plasma etching of the process wafer; providing a heat exchange surface within the heating chamber for mounting the process wafer in heat exchange relationship thereto; mounting the process wafer on a heat exchange surface contained within the heating chamber; and, heating the process wafer to a temperature sufficient to vaporize an acidic residue thereon to form acidic vapors; and, removing the acidic vapors from the heating chamber.