Patents Assigned to Tawian Semiconductor Manufacturing Co., Ltd.
  • Publication number: 20230375500
    Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Applicant: Tawian Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Cheng Huang, Yi-Hsien Chang, Chin-Hua Wen, Chun-Ren Cheng, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Ching-Hui Lin, Sean Cheng, Hector Chang
  • Patent number: 11791534
    Abstract: This application relates to a device for signal transmission (e.g., radio frequency transmission) and a method for forming the device. For example, the method includes: depositing an insulating layer that includes polybenzobisoxazole (PBO) on a carrier; forming a backside layer including polyimide (PI) over the adhesive layer; forming a die-attach film (DAF) over the backside layer; forming one or more through-insulator via (TIV)-wall structures and one or more TIV-grating structures on the second backside layer; placing a die, such as a radio frequency (RF) integrated circuit (IC) die, on the DAF; encapsulating the die, the one or more TIV-wall structures, and the one or more TIV-grating structures, with a molding compound to form an antenna package including one or more antenna regions; and forming a redistribution layer (RDL) structure on the encapsulated package. The RDL structure can include one or more antenna structures coupled to the die.
    Type: Grant
    Filed: August 3, 2021
    Date of Patent: October 17, 2023
    Assignee: Tawian Semiconductor Manufacturing Co., Ltd.
    Inventors: Feng-Wei Kuo, Wen-Shiang Liao
  • Patent number: 6943103
    Abstract: Novel methods for reducing shear stress applied to solder bumps on a flip chip. The methods are particularly applicable to reducing temperature-induced shear stress on solder bumps located adjacent to an empty space on a flip chip during high-temperature testing of the chip. According to a first embodiment, the method includes providing an anchoring solder bump in each empty space on the flip chip. The anchoring solder bumps impart additional structural integrity to the flip chip and prevent shear-induced detachment of solder bumps from the flip chip, particularly those solder bumps located adjacent to each anchoring solder bump. According to a second embodiment, the method includes providing an anchoring solder bump in the empty space and then connecting the anchoring solder bump to an adjacent solder bump on the chip using a solder bridge.
    Type: Grant
    Filed: January 29, 2004
    Date of Patent: September 13, 2005
    Assignee: Tawian Semiconductor Manufacturing Co., Ltd.
    Inventors: Yia-Liang Kuo, Yu-Chang Lin, Yu-Ting Lin