Abstract: The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.

Abstract: Disclosed are a quantum dot light emitting diode device a method for manufacturing the same, and a display panel. The quantum dot light emitting diode device includes a functional layer and a quantum dot light emitting layer, and a self-assembled molecular layer is disposed between the functional layer and the quantum dot light emitting layer. A force is generated between the self-assembled molecular layer and the functional layer to improve the bonding force between the functional layer and the quantum dot light emitting layer, thereby improving the mechanical reliability of an interface.

Abstract: A method of manufacturing an QLED device incudes: providing a substrate having a quantum dot layer on an anode; applying an oxidizing agent solution on the quantum dot layer; forming an electron transport layer on the quantum dot layer; and forming a cathode on the electron transport layer to obtain the QLED device. Material of the quantum dot layer includes a quantum dot, an unsaturated fatty acid ligand is bonded to a surface of the quantum dot, and material of the electron transport layer includes a n-type nano-metal oxide.

Abstract: Disclosed is a quantum dot light-emitting device, a manufacturing method thereof, and a display apparatus. There are at least two light-emitting layers, each of the light-emitting layers includes a core-shell quantum dot, the core-shell quantum dot includes a core and at least one shell layer coated on a surface of the core, thicknesses of respective outermost shell layers of the core-shell quantum dots of the quantum dot light-emitting layers become sequentially increased in a direction from an anode to a cathode.

Abstract: Disclosed herein are a light-emitting device including a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer, and a methods of manufacturing the same. In the present disclosure, an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer on the first functional layer, so as to avoid the contact of the patterned second functional layer with the first functional layer, and avoid a current leakage of the light-emitting device.

Abstract: The present application discloses a QLED manufacturing method including: providing a substrate provided with an electron transport layer; depositing a solution on a surface of the electron transport layer, standing until the electron transport layer is infiltrated, and then performing a drying operation, wherein the solution includes a main solvent and a solute dissolved in the main solvent, a polarity of the solute is greater than a polarity of the main solvent, and the solution is not able to dissolve the electron transport material in the electron transport layer; preparing other film layers on the electron transport layer processed by the mixed solvent to prepare the QLED, such that the QLED at least includes: an anode and a cathode arranged oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and the electron transport layer between the quantum dot light emitting layer and the cathode.

Abstract: A post-processing method of a quantum dot light-emitting diode, which includes the following steps: providing a quantum dot light-emitting diode, the quantum dot light-emitting diode includes a cathode and an anode arranged oppositely, and a quantum dot light-emitting layer arranged between the cathode and the anode; energizing the cathode and anode of the quantum dot light-emitting diode, and performing a light irradiation treatment on the quantum dot light-emitting diode.

Abstract: The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.

Abstract: The present application discloses a composite and its preparation method and application. The composite includes silica-coated quantum dots and graphene nanosheets on the surface of the silica-coated quantum dots; wherein the silica-coated quantum dots include quantum dots and silica layer coated on the surface of the quantum dots. And the graphene nanosheets and the silica layer is bonded by (O—)3Si—R1—NHCO—R3—CONH—R2—Si(O—)3 or (O—)3Si—R4—SCH2CH2—R5—Si(O—)3, R1, R2, R4, R5 are respectively selected from a group consisting of a hydrocarbyl or a hydrocarbyl derivative, R3 is selected from a hydrocarbyl, a hydrocarbyl derivative, an aryl or an aryl derivative. The composite can further improve the stability of quantum dots without affecting the inherent optical properties of quantum dots, thereby improving luminous efficiency.