Abstract: A composite material. and a light-emitting diode and a preparation method therefor. The composite material includes a carbolong compound and a heteromacrocyclic compound, wherein the molar ratio of the carbolong compound to the heteromacrocyclic compound is 1:1-3; the carbolong compound comprises anions and cations; and the heteromacrocyclic compound is selected from one of a substituted or unsubstituted heteroaromatic compound which has 6-20 annular atoms and is of a semi-ring structure, a substituted or unsubstituted heteroaromatic compound having 12-50 annular atoms, a dimer of a substituted or unsubstituted heteroaromatic compound having 12-50 annular atoms, and a trimer of a substituted or unsubstituted heteroaromatic compound having 12-50 annular atoms. The composite material can reduce the work function of an electrode, prolong the operating life of a device, and improve the performance of the device.

Abstract: A light-emitting diode and a manufacturing method therefor. A light-emitting layer is used as the last layer of a deposited material, so that the corrosion to the light-emitting layer is avoided in the process of preparing other structures on the light-emitting layer, and the stability of the light-emitting layer is improved. Moreover, there is no functional material on the surface of the light-emitting layer to shield emitted light, a contact area of the light-emitting layer and a second electrode layer is not reduced, and a light-emitting rate of the light-emitting layer and the light-emitting efficiency of the light-emitting diode are ensured.

Abstract: A nanomaterial includes a ZnO nanocrystal and a surface ligand bonded to the ZnO nanocrystal. The surface ligand has a structure of R1, R2, and R3 are independently selected from at least one of an alkyl group, an alkoxy group, a hydroxyalkoxy group, a hydroxyl group, or a hydrogen atom. R4 is selected from a hydrocarbon group having a carbon number of 5 to 60. A carbon number of the alkyl group ranges from 1 to 5. A carbon number of the alkoxy group ranges from 1 to 5. A carbon number of the hydroxyalkoxy group ranges from 1 to 5.

Abstract: A light-emitting device preparation method includes: preparing one or more functional layers on a first electrode; preparing a second electrode on the one or more functional layers; wherein, at least one of the one or more functional layers is obtained by subjecting a solution of the corresponding functional layer material to a first thermal annealing treatment and then a second thermal annealing treatment.

Abstract: The present application discloses a method for preparing quantum dots light-emitting diode, including following steps: providing a base plate, wherein an upper surface of the base plate is provided with quantum dots light-emitting layer; and immersing the base plate in a solvent system to perform an ultrasonic processing, wherein the solvent system comprises: a host solvent and doping solvent dissolved in the main, a polarity of the doping solvent is less than a polarity of the host solvent, and the host solvent is an organic solvent that does not dissolve quantum dots.

Abstract: Provided in the embodiments of the present application are a quantum dot film, and a quantum dot light-emitting diode and a preparation method therefor. The quantum dot film comprises a first quantum dot, a second quantum dot and a first ligand. By means of the first ligand, first excitons generated by the first quantum dot can be stacked with second excitons generated by the second quantum dot, and the quantum dots of the whole hybrid system have the advantages of quantum dots of two different types by means of the stacking effect between the excitons, such that the light emission performance of the quantum dot light-emitting diode is improved.

Abstract: A nanoparticle, a preparation method therefor, and a light-emitting diode are disclosed. The nanoparticle provided in the present application includes a zinc oxide nanoparticle as a core, and a silicon dioxide coating layer partially coating the zinc oxide nanoparticle as a shell, such that the nanoparticle has an asymmetric electronic structure, and the interaction of different material interfaces may be reduced, thereby improving the stability and conductivity of the material.

Abstract: A thin film processing method includes: providing an electron transport film layer using a metal oxide as an electron transport material; and annealing the electron transport film layer by means of pulsed light in a protective gas environment having an oxygen content of 25-40 ppm.

Abstract: The present disclosure provides a photoelectric device and preparation method therefor, and display apparatus. The photoelectric device includes an anode, a light-emitting layer, an electronic function layer, and a cathode disposed in stack, wherein a material of the electronic function layer includes a two-dimensional montmorillonite nanosheet with anisotropic conductivity such that the electronic functional layer has a large band gap perpendicular to a film layer and a good conductivity along a surface direction of the film layer, thereby improving charge injection balance and luminescence uniformity of the photoelectric device.

Abstract: A micro-sampling mixer and a micro-reaction system are disclosed. The micro-sampling mixer includes a sample injection channel, a diluent injection channel, a mixing channel, and a connecting portion. One end of the sample injection channel is in communication with the mixing channel, and another end thereof is a sample input end. One end of the diluent injection channel is in communication with the mixing channel, and another end thereof is a diluent input end. The connecting portion is arranged on the mixing channel, and the connecting portion is connected to an external light detection device so as to perform light detection on a sample in the mixing channel.

Abstract: A display terminal adjustment method is provided, this method includes: obtaining image data of an image to be displayed and screen data of the display terminal; obtaining a first adjustment ratio and a second adjustment ratio according to an image size in the image data and a screen size in the screen data; adjusting the image to be displayed to obtain a first target image according to the first adjustment ratio, and adjusting the image to be displayed to obtain a second target image according to the second adjustment ratio; and adjusting the display terminal to be in a target display mode according to the first target image and the second target image, according to this method, a size of a blank area of the display terminal is reduced, and an utilization rate of the screen of the display terminal is improved.

Abstract: The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.

Abstract: Disclosed are a quantum dot light emitting diode device a method for manufacturing the same, and a display panel. The quantum dot light emitting diode device includes a functional layer and a quantum dot light emitting layer, and a self-assembled molecular layer is disposed between the functional layer and the quantum dot light emitting layer. A force is generated between the self-assembled molecular layer and the functional layer to improve the bonding force between the functional layer and the quantum dot light emitting layer, thereby improving the mechanical reliability of an interface.

Abstract: A method of manufacturing an QLED device incudes: providing a substrate having a quantum dot layer on an anode; applying an oxidizing agent solution on the quantum dot layer; forming an electron transport layer on the quantum dot layer; and forming a cathode on the electron transport layer to obtain the QLED device. Material of the quantum dot layer includes a quantum dot, an unsaturated fatty acid ligand is bonded to a surface of the quantum dot, and material of the electron transport layer includes a n-type nano-metal oxide.

Abstract: Disclosed is a quantum dot light-emitting device, a manufacturing method thereof, and a display apparatus. There are at least two light-emitting layers, each of the light-emitting layers includes a core-shell quantum dot, the core-shell quantum dot includes a core and at least one shell layer coated on a surface of the core, thicknesses of respective outermost shell layers of the core-shell quantum dots of the quantum dot light-emitting layers become sequentially increased in a direction from an anode to a cathode.

Abstract: A laminated structure which at least includes one laminated unit, the lamination unit includes: a first metal oxide layer and a second metal oxide layer which are oppositely arranged, and a third metal layer arranged between the first metal oxide layer and the second metal oxide layer, and a third metal oxide film is respectively formed between the first metal oxide layer and the third metal layer, and between the second metal oxide layer and the third metal layer.

Abstract: A thin film includes a polymer material and quantum dots (QDs). The QDs are dispersed in the polymer material. The polymer material includes at least one barrier polymer material. A weight average molecular weight of the at least one barrier polymer material is higher than 100,000.

Abstract: The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.

Abstract: The present application discloses a QLED manufacturing method, which includes following steps of: providing a substrate provided with a bottom electrode, and preparing a quantum dot light emitting layer on the substrate; illuminating after depositing a first compound solution on a surface of the quantum dot light emitting layer, here a first compound is a compound capable of being photodegraded into ions after the illumination.

Abstract: Disclosed herein are a light-emitting device including a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer, and a methods of manufacturing the same. In the present disclosure, an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer on the first functional layer, so as to avoid the contact of the patterned second functional layer with the first functional layer, and avoid a current leakage of the light-emitting device.