Patents Assigned to TCL Technology Group Corporation
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Publication number: 20250223493Abstract: The present disclosure provides a quantum dot and preparation method thereof, and a quantum dot light-emitting device. The composite material includes a first quantum dot and a second quantum dot, the surface of the first quantum dot is connected with an anionic group, and the surface of the second quantum dot is connected with a cationic group. The composite material might improve the luminescence performance of the quantum dot light-emitting device.Type: ApplicationFiled: December 30, 2024Publication date: July 10, 2025Applicants: Guangdong Juhua Research Institute of Advanced Display, TCL Technology Group CorporationInventors: Likuan ZHOU, Haikun LIU, Jiaqing ZHUANG
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Publication number: 20250221293Abstract: The present disclosure provides a composite material and a preparation method thereof, and a light-emitting device. The composite material includes inorganic nanoparticles and a polymer, the polymer is attached to the inorganic nanoparticles, and the polymer contains a porphyrin group. Since the polymer has the property of isolating water and oxygen, when the polymer is attached to the inorganic nanoparticle, the influence of external water and oxygen on the inorganic nanoparticle may be weakened or eliminated, so that the electrical properties of the inorganic nanoparticle remain stable. Since the porphyrin group in the polymer has conductive properties, the electron transport efficiency of the composite material may be improved.Type: ApplicationFiled: December 26, 2024Publication date: July 3, 2025Applicant: TCL Technology Group CorporationInventor: Siyu XIA
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Publication number: 20250221295Abstract: The present disclosure film, preparation method thereof and photoelectric device. A film, a material of the film includes a semiconductor material and a fluorine-containing ester compound. The film provided by the present disclosure has good water-oxygen corrosion resistance and high stability.Type: ApplicationFiled: December 26, 2024Publication date: July 3, 2025Applicant: TCL Technology Group CorporationInventor: Qiang LUO
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Publication number: 20250214901Abstract: Disclosed are a composite material, a film, and a photoelectric device. The composite material includes a first metal oxide and a metal halide. The metal halide includes magnesium element. A conductivity of the first metal oxide is adjustable by adding the metal halide, thereby meeting needs of different application scenarios.Type: ApplicationFiled: December 20, 2024Publication date: July 3, 2025Applicants: Guangdong Juhua Research Institute of Advanced Display, TCL Technology Group CorporationInventor: Hua JIANG
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Publication number: 20250215018Abstract: The present disclosure quantum dot precursor, preparation method thereof and quantum dot. A structural formula of the quantum dot precursor is shown in formula (I): wherein the M is selected from metal. The quantum dot precursor provided by the present disclosure has high stability and consistency.Type: ApplicationFiled: December 20, 2024Publication date: July 3, 2025Applicants: Guangdong Juhua Research Institute of Advanced Display, TCL Technology Group CorporationInventor: Hua JIANG
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Publication number: 20250207021Abstract: The present disclosure provides a quantum dot and preparation method thereof, and light-emitting device. The method of preparing the quantum dot comprising: providing a single molecule source precursor solution, the single molecule source precursor solution comprises a single molecule source precursor compound comprising a first metal ion and a first anion; heating the single molecule source precursor solution to obtain a sulfur-containing quantum core; and forming one or more shell layers on the surface of the sulfur-containing quantum dot core to obtain the quantum dot. The sulfur-containing quantum dot core prepared by the method have few defects, thereby the defects of the generated quantum dot are reduced.Type: ApplicationFiled: December 19, 2024Publication date: June 26, 2025Applicants: Guangdong Juhua Research Institute of Advanced Display, TCL Technology Group CorporationInventors: Likuan ZHOU, Wenjun HOU
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Publication number: 20250212594Abstract: The present disclosure composite film, preparation method thereof and light-emitting device. A composite film, includes X layers of first film and Y layers of second film alternately stacked, wherein X is an integer ?1 and Y is an integer ?1. A material of the first film includes inorganic nanoparticle, and a material of the second film includes inorganic metal compound. The composite film provided by the present disclosure has good bending resistance.Type: ApplicationFiled: December 18, 2024Publication date: June 26, 2025Applicant: TCL Technology Group CorporationInventor: Xiongfeng LIN
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Publication number: 20250212682Abstract: The present disclosure film, preparation method thereof and photoelectric device. A film, a material of the film includes material and modifier. The modifier includes benzothiadiazole compound. The film provided by the present disclosure is beneficial to improving the electron transfer rate.Type: ApplicationFiled: December 23, 2024Publication date: June 26, 2025Applicant: TCL Technology Group CorporationInventors: Mi YUAN, Zizhe LU
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Publication number: 20250197561Abstract: Disclosed in the present disclosure are a polymer, a composition, and an optoelectronic device. The polymer has a structure of formula (I), wherein n is any integer from 10 to 50, Ar1 is selected from any one of the following structures, Ar2 and Ar3 are each independently selected from any one or more of a substituted or unsubstituted aryl group having 6 to 14 ring atoms, and a substituted or unsubstituted heteroaryl group having 5 to 14 ring atoms.Type: ApplicationFiled: December 16, 2024Publication date: June 19, 2025Applicants: Guangdong Juhua Research Institute of Advanced Display, TCL Technology Group CorporationInventor: Congcong CAO
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Patent number: 12101953Abstract: The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.Type: GrantFiled: September 17, 2019Date of Patent: September 24, 2024Assignee: TCL Technology Group CorporationInventors: Ruifeng Li, Lei Qian, Weiran Cao, Wenyong Liu
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Publication number: 20240292726Abstract: A method of manufacturing an QLED device incudes: providing a substrate having a quantum dot layer on an anode; applying an oxidizing agent solution on the quantum dot layer; forming an electron transport layer on the quantum dot layer; and forming a cathode on the electron transport layer to obtain the QLED device. Material of the quantum dot layer includes a quantum dot, an unsaturated fatty acid ligand is bonded to a surface of the quantum dot, and material of the electron transport layer includes a n-type nano-metal oxide.Type: ApplicationFiled: August 26, 2022Publication date: August 29, 2024Applicant: TCL Technology Group CorporationInventor: Zhenlei YAO
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Publication number: 20240292643Abstract: Disclosed are a quantum dot light emitting diode device a method for manufacturing the same, and a display panel. The quantum dot light emitting diode device includes a functional layer and a quantum dot light emitting layer, and a self-assembled molecular layer is disposed between the functional layer and the quantum dot light emitting layer. A force is generated between the self-assembled molecular layer and the functional layer to improve the bonding force between the functional layer and the quantum dot light emitting layer, thereby improving the mechanical reliability of an interface.Type: ApplicationFiled: September 27, 2022Publication date: August 29, 2024Applicant: TCL Technology Group CorporationInventor: Jing WANG
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Publication number: 20240284695Abstract: Disclosed is a quantum dot light-emitting device, a manufacturing method thereof, and a display apparatus. There are at least two light-emitting layers, each of the light-emitting layers includes a core-shell quantum dot, the core-shell quantum dot includes a core and at least one shell layer coated on a surface of the core, thicknesses of respective outermost shell layers of the core-shell quantum dots of the quantum dot light-emitting layers become sequentially increased in a direction from an anode to a cathode.Type: ApplicationFiled: September 13, 2022Publication date: August 22, 2024Applicant: TCL Technology Group CorporationInventor: Kaimin CHEN
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Publication number: 20240120441Abstract: Disclosed herein are a light-emitting device including a first electrode, a first functional layer, a patterned insulating layer, a patterned second electrode, a patterned second functional layer, and a light-emitting layer, and a methods of manufacturing the same. In the present disclosure, an orthographic projection of the patterned second electrode on the first functional layer is located within an orthographic projection of the patterned insulating layer on the first functional layer, so as to avoid the contact of the patterned second functional layer with the first functional layer, and avoid a current leakage of the light-emitting device.Type: ApplicationFiled: December 20, 2023Publication date: April 11, 2024Applicant: TCL Technology Group CorporationInventor: Xiongfeng LIN
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Patent number: 11889745Abstract: The present application discloses a QLED manufacturing method including: providing a substrate provided with an electron transport layer; depositing a solution on a surface of the electron transport layer, standing until the electron transport layer is infiltrated, and then performing a drying operation, wherein the solution includes a main solvent and a solute dissolved in the main solvent, a polarity of the solute is greater than a polarity of the main solvent, and the solution is not able to dissolve the electron transport material in the electron transport layer; preparing other film layers on the electron transport layer processed by the mixed solvent to prepare the QLED, such that the QLED at least includes: an anode and a cathode arranged oppositely, a quantum dot light emitting layer arranged between the anode and the cathode, and the electron transport layer between the quantum dot light emitting layer and the cathode.Type: GrantFiled: September 17, 2019Date of Patent: January 30, 2024Assignee: TCL Technology Group CorporationInventors: Jie Zhang, Chaoyu Xiang
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Patent number: 11877501Abstract: A post-processing method of a quantum dot light-emitting diode, which includes the following steps: providing a quantum dot light-emitting diode, the quantum dot light-emitting diode includes a cathode and an anode arranged oppositely, and a quantum dot light-emitting layer arranged between the cathode and the anode; energizing the cathode and anode of the quantum dot light-emitting diode, and performing a light irradiation treatment on the quantum dot light-emitting diode.Type: GrantFiled: September 17, 2019Date of Patent: January 16, 2024Assignee: TCL Technology Group CorporationInventors: Jie Zhang, Chaoyu Xiang
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Patent number: 11183657Abstract: The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.Type: GrantFiled: March 20, 2018Date of Patent: November 23, 2021Assignee: TCL Technology Group CorporationInventors: Zhurong Liang, Weiran Cao, Jia Liu
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Publication number: 20200325392Abstract: The present application discloses a composite and its preparation method and application. The composite includes silica-coated quantum dots and graphene nanosheets on the surface of the silica-coated quantum dots; wherein the silica-coated quantum dots include quantum dots and silica layer coated on the surface of the quantum dots. And the graphene nanosheets and the silica layer is bonded by (O—)3Si—R1—NHCO—R3—CONH—R2—Si(O—)3 or (O—)3Si—R4—SCH2CH2—R5—Si(O—)3, R1, R2, R4, R5 are respectively selected from a group consisting of a hydrocarbyl or a hydrocarbyl derivative, R3 is selected from a hydrocarbyl, a hydrocarbyl derivative, an aryl or an aryl derivative. The composite can further improve the stability of quantum dots without affecting the inherent optical properties of quantum dots, thereby improving luminous efficiency.Type: ApplicationFiled: September 30, 2019Publication date: October 15, 2020Applicant: TCL Technology Group CorporationInventors: Zhiwen Nie, Yixing Yang