Abstract: A light-emitting thin film or phosphor is low temperature annealed by electron beam irradiation to effect crystallization and increase luminance without causing heat-associated damage to the underlying substrate. The treated thin film or phosphor is particularly well adapted for use in electroluminescent devices. The invention is also directed at a method and apparatus for reliably forming luminescent thin films endowed with such properties.

Abstract: When connecting electrodes of a chip device CP are ultrasonic-bonded to circuit electrodes provided for a resin substrate 10 to mount the chip device CP on the resin substrate 10, a heater 5 for heating the resin substrate 10 is provided with which the temperature of the resin substrate 10 is raised to a level with which the ratio of elastic modulus &egr;h realized when heat is supplied with respect to elastic modulus &egr;r of the resin substrate 10 at room temperature satisfies 1>&egr;h/&egr;r≧0.5. The heater 5 may be provided for the substrate retaining frame 4.

Abstract: This invention has an object of providing a method for producing a multilayer substrate or an electronic part wherein decrease in the thickness has been enabled without causing the problem of insufficient strength or the like in the handling, as well as the electronic part. Such object has been attained by a method for producing a multilayer substrate or an electronic part comprising the steps of adhering a conductor layer to a transfer film, patterning the conductor layer to form a predetermined pattern, placing the transfer film overlaid with the patterned conductor layer on a prepreg so that the side of the conductor layer faces the prepreg, and then adhering the transfer film to the prepreg by applying heat and pressure and peeling the transfer film to produce the prepreg having the conductor layer formed thereon; and the multilayer electronic part produced by such method.

Abstract: A method of producing a magnetic recording medium, and an apparatus thereof in which coercive force can be detected in an in-line mode, a metal thin film magnetic layer can be produced stably, and a vapor deposition film having a stable quality can be obtained. A method of producing a magnetic recording medium, comprising the steps of forming a metal thin film magnetic layer on a substrate, irradiating a light to a surface of the metal thin film magnetic layer, and measuring lightness of a reflected light from the surface to monitor coercive force of the metal thin film magnetic layer.

Abstract: A tape cartridge includes a cartridge body which is formed by cartridge halves 211 and 212, and has peripheral walls formed by respective side walls 221b and 212b of the cartridge halves 211 and 212, and a tape reel. The tape cartridge is configured such that one of the peripheral walls of the cartridge body has a corner portion formed with a tape extraction hole, and that a side wall 212b of a cartridge half 212 and a side wall 211b of a cartridge half 211 forming another peripheral wall adjacent to the corner portion have end surfaces thereof brought into contact with each other. The side wall 211b is coupled to the side wall 212b in a state in which the movement of the end surface of the side wall 211b in a direction away from the end surface of the side wall 212b and the respective movements of the side wall 211b to the outer surface side and inner surface side thereof are restricted.

Abstract: An alloy used for the production of a rare-earth magnet alloy, particularly the boundary-phase alloy in the two-alloy method is provided to improve the crushability. The Alloy consists of (a) from 35 to 60% of Nd, Dy and/or Pr, and the balance being Fe, or (b) from 35 to 60% of Nd, Dy and/or Pr, and at least one element selected from the group consisting of 35% by weight or less of Co, 4% by weight or less of Cu, 3% by weight or less of Al and 3% by weight or less of Ga, and the balance being Fe. The volume fraction of R2Fe17 phase (Fe may be replaced with Cu, Co, Al or Ga) is 25% or more in the alloy and the average size of an R2Fe17 phase is 20 &mgr;m or less. The alloy can be produced by a centrifugal casting at an average accumulating rate of melt at 0.1 cm/second or less.

Abstract: An optical recording medium has deposited on a substrate a recording layer incorporating therein a cyanine dye, preferably an indoline dye, and optionally incorporating therein an autoxidizable compound or a thermoplastic resin and/or a singlet oxygen quencher.

Abstract: A head assembly including a suspension, a head slider mounted on a front end portion of the suspension and having a magnetoresistive element, and a pair of lead lines formed on the suspension and having first ends connected to the magnetoresistive element. The head assembly further includes a metal ball connected by bonding to the pair of lead lines. In handling the head assembly as a separate member, a current caused by static electricity flows through the metal ball short-circuiting the pair of lead lines, thereby preventing burning of the magnetoresistive element due to the current. After mounting the head assembly to an actuator arm, the metal ball is removed to electrically open the pair of lead lines.

Abstract: An image sensor (10) has a substrate (1), an active layer (3') having a source region and a drain region placed on said substrate (1), a gate insulation layer (4') placed on said active layer, and a gate electrode layer (5') on said gate insulation layer (4'). The active layer (3') is produced by the steps of producing amorphous silicon layer by using disilane gas (Si.sub.2 H.sub.6) through Low Pressure CVD process, and annealing said layer at 500.degree.-650.degree. C. for 4-50 hours in nitrogen gas atmosphere. The gate insulation layer (4') is produced through oxidation of the surface of the active layer at high temperature around 900.degree.-1100.degree. C. The oxidation process at high temperature improves the anneal process and improves the active layer. Thus, an image sensor with uniform characteristics is obtained with improved producing yield rate.

Abstract: A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4'). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1).