Abstract: A TMR element includes a magnetic tunnel junction, a side wall portion that is disposed on a side surface of the magnetic tunnel junction, a cap layer that covers a top surface of the magnetic tunnel junction and a surface of the side wall portion, and an upper electrode layer that is disposed on the cap layer. The cap layer includes an upper surface and a lower surface. The upper surface has a protruding shape that protrudes in a direction away from the magnetic tunnel junction in a first region which is positioned immediately above the top surface of the magnetic tunnel junction. The upper surface has a recess that is recessed in a direction toward the side wall portion in a second region which is positioned immediately above the surface of the side wall portion.

Abstract: A thin film capacitor includes a capacitance portion in which a plurality of electrode layers and dielectric layers are alternately laminated, a cover layer, an insulating layer, a via hole in which one electrode layer different from an uppermost electrode layer among the plurality of electrode layers is exposed at a bottom surface thereof, and an opening which is provided inside the via hole and in which the one electrode layer is exposed at a bottom surface thereof, and in which the cover layer and the insulating layer are exposed at a side surface. The opening includes a first opening portion which passes through the insulating layer and a second opening portion which is provided below the first opening portion and passes through the cover layer, and when an inner diameter of the first opening portion is D1 and an inner diameter of the second opening portion is D2, D1>D2.

Abstract: An SOI semiconductor structure, including a substrate layer formed on a back side and a semiconductor layer of a second conductivity type formed on a front side, an insulating layer being disposed between the substrate layer and the semiconductor layer, a three-dimensional Hall sensor structure having a sensor region made up of a monolithic semiconductor body being formed in the semiconductor layer, and the semiconductor body extending from an underside up to the front side, at least three first metallic terminal contacts being formed on the upper side, and at least three second metallic terminal contacts being formed on the underside, the first terminal contacts being offset with respect to the second terminal contacts in a projection perpendicular to the front side, each first terminal contact and each second terminal contact being formed in each case on a highly doped semiconductor contact region of a second conductivity type.

Abstract: Provided is a dielectric composition which includes, as a main component, a complex oxide represented by a general formula AaBbC4O15+? and having a tungsten bronze structure, wherein “A” includes at least Ba, “B” includes at least Zr, “C” includes at least Nb, “a” is 3.05 or higher, and “b” is 1.01 or higher. In the dielectric composition, when the total number of atoms occupying M2 sites in the tungsten bronze structure is set to 1, the proportion of “B” is 0.250 or higher. In addition, in the dielectric composition, an X-ray diffraction peak of a (410) plane of the tungsten bronze structure is splitted into two, and an integrated intensity ratio of an integrated intensity of a high-angle side peak of the X-ray diffraction peak with respect to an integrated intensity of a low-angle side peak of the X-ray diffraction peak is 0.125 or higher.

Abstract: A lens drive device includes a lens holder capable of holding at least one lens and a frame arranged around the holder and holding the holder relatively movable along a light axis of the lens. At least three stopper convex portions protruding toward the frame are formed on an outer circumference of the holder. Stopper concave portions housing each of the stopper convex portions are formed on the frame correspondingly to the stopper convex portions. A convex intersection corner between the first convex end surface and the convex side surface has a chamfering portion or an R curved surface portion to avoid touching a concave intersection corner between the concave bottom surface and the concave side surface.

Abstract: A primary assembly, a positioning system and a method for determining a distance between a primary assembly and a secondary assembly are disclosed. In an embodiment, a primary assembly for a wireless power transmission system includes a first antenna and a second antenna, wherein the first antenna is configured to determine a distance between the first antenna and a circuit component of a secondary assembly for the wireless power transmission system, and wherein the second antenna is configured to determine a distance between the second antenna and the circuit component of the secondary assembly.

Abstract: The object of the present invention is to provide the multilayer ceramic capacitor having no deterioration of dielectric properties even in case an inhibitor of an internal electrode layer is pushed out to a dielectric layer when sintering. The multilayer ceramic capacitor 1 including a capacitor element body 10 comprising a dielectric layer 2 and an internal electrode layer 3 stacked in an alternating manner, wherein when Za represents Zr concentration of an dielectric particle in a center part 6 of the dielectric layer 2 and Zb represents Zr concentration of a dielectric particle near the internal electrode layer, 0<(Za/Zb)<1 is satisfied.

Abstract: A multilayer ceramic electronic component includes an element body. The element body includes a capacitance region and an exterior region. The capacitance region is formed by alternately laminating inner dielectric layers and internal electrode layers having different polarities. The exterior region is laminated outside the capacitance region in a laminating direction and formed by outer dielectric layers. The internal electrode layers contain a main component of copper and/or silver. An exterior void ratio is larger than a capacitance void ratio, in which the exterior void ratio is an area ratio of voids contained in the exterior region, and the capacitance void ratio is an area ratio of voids contained in the capacitance region.

Abstract: A coil device capable of reducing magnetic coupling between conductors while ensuring good inductance characteristics is provided. A coil device 10 includes a first core 20, a second core 30 combined with the first core 20, and a first conductor 40 and a second conductor 50 arranged adjacent to each other between the first core 20 and the second core 30. At least one of the first core 20 and the second core 30 includes a center leg portion 23 (or a center leg portion 33) and a pair of outer leg portions 22a, 22b (or outer leg portions 32a, 32b) arranged on both sides of the center leg portion 23 (or center leg portion 33), and a magnetic body is arranged between the first conductor 40 and the second conductor 50.

Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.

Abstract: A coil device includes a main core and a sub core. The main core includes a middle leg for winding a coil body and an outer leg connected with the middle leg via a base portion. The sub core is disposed to face the base portion across the middle leg. A gap between the middle leg and the sub core is wider than that between the outer leg and the sub core.

Abstract: A multilayer coil component includes an element body, a coil, and a terminal electrode. The element body includes a first main face, second main face, first end face, second end face, first side face and second side face. The terminal electrode is connected to the coil. The terminal electrode includes a main-face electrode portion provided on the first main face. The coil includes a plurality of coil conductors. The plurality of coil conductors includes a first coil conductor disposed closest to the first main face to oppose to the main-face electrode portion and a second coil conductor disposed closer to the second main face than the first coil conductor. The first coil conductor has a width narrower than a width of the second coil conductor. The first coil conductor has an aspect ratio higher than an aspect ratio of the second coil conductor.

Abstract: An optical system is provided and includes a reflecting unit, a lens unit, an image sensor, and a control module. The image sensor is configured to receive light, and the light is configured to enter the optical system and pass through the reflecting unit and the lens unit to the image sensor. The control module is configured to control a first driving module of the reflecting unit and/or a lens driving mechanism of the lens unit according to reference information to drive the light to move in a first direction and/or a second direction on the image sensor, so as to compensate for the offset displacement of the light on the image sensor when the optical system is shaken.

Abstract: A multilayer ceramic electronic component includes an element body and a terminal electrode. The element body includes internal electrode layers and insulation layers alternately laminated in a lamination direction. The terminal electrode is formed on an outer surface of the element body to be contacted and connected with the internal electrode layers. The terminal electrode includes an end-side electrode part and an upper-side electrode part. The end-side electrode part covers a leading end of the element body where the internal electrode layers are led. The upper-side electrode part is formed on a part of an upper surface of the element body and continues to the end-side electrode part. The terminal electrode is not substantially formed on a lower surface of the element body located on the other side of the upper surface along the lamination direction.

Abstract: A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.

Abstract: A piezoelectric actuator (1) includes: a piezoelectric element (3); and a first frictional portion (10) and a second frictional portion (12) that are disposed on one principal surface (2d) of the piezoelectric element (3). The first frictional portion (10) is disposed at a position other than the antinodes of the piezoelectric element (3) at which a distance from one of the end surfaces (2a) is less than ? L, where L represents a length in the longitudinal direction of the piezoelectric element (3). The second frictional portion (12) is disposed at a position other than the antinodes of the piezoelectric element (3) at which a distance from the other of the end surfaces (2b) is less than ? L.

Abstract: A driving mechanism for supporting an optical member is provided, including a base, a frame, a movable portion, a driving module, and an adhesive member. The base includes a plurality of first sidewalls, and at least one recess is formed on the first sidewalls. The frame includes a plurality of second sidewalls, and at least one opening is formed on the second sidewalls. The base and the frame form a hollow box, and the opening corresponds to the recess. The movable portion and the driving module are disposed in the hollow box. The driving module can drive the movable portion to move relative to the base. The adhesive member is accommodated in the opening and the recess, and extended along the first sidewalls. The adhesive member is disposed between the first sidewalls and the second sidewalls.

Abstract: An electroconductive substrate, including: a base material; a foundation layer disposed on the base material; a trench formation layer disposed on the foundation layer, and an electroconductive pattern layer including metal plating. A trench including a bottom surface to which the foundation layer is exposed, is formed. The trench is filled with the electroconductive pattern layer. The foundation layer includes a mixed region which is formed from a surface of the foundation layer on the electroconductive pattern layer side towards the inside thereof, and contains metal particles which contain a metal configuring the electroconductive pattern layer, and enter the foundation layer.

Abstract: A magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, and an additive-containing layer disposed at any position in a laminating direction, at least one of the first ferromagnetic layer and the second ferromagnetic layer is a Heusler alloy containing at least one of boron and carbon, at least part of which is crystallized, and the additive-containing layer is a non-magnetic layer containing at least one of boron and carbon, and any one element selected from the group made of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt and Au.

Abstract: A reservoir computing data flow processor includes a plurality of reservoir units to be units constituting a reservoir. The reservoir is able to be reconfigured by changing a connection relationship between the reservoir units. Each of the reservoir units is an operation unit block configured to execute a predetermined operation. The operation unit block includes a first adder configured to perform an addition operation on at least two inputs, a nonlinear operator configured to apply a nonlinear function to an output from the first adder or a result of multiplying the output by a predetermined coefficient, and a second adder configured to perform an addition operation on at least two inputs including an output from the nonlinear operator or a result of multiplying the output by a predetermined coefficient.