Abstract: According to various aspects, a device is provided including: a memristive element residing in a memristive state of a plurality of memristive states; and a read circuit configured to: in a first measurement, measure a first voltage drop over the memristive element or a first current through the memristive element, in a second measurement subsequent to the first measurement, measure a second voltage drop over the memristive element or a second current through the memristive element; and determine the memristive state of the memristive element based on the first measurement and the second measurement.

Abstract: A device includes a memristive element; and a write circuit to write the memristive element into a memristive state of a plurality of memristive states by a write operation, wherein the memristive state has a characteristic flux and/or a characteristic charge; wherein the characteristic flux corresponds to a characteristic voltage drop over the memristive element applied for a saturation time and wherein the characteristic charge corresponds to a characteristic current through the memristive element applied for a saturation time; wherein the write operation includes: causing a write voltage drop over the memristive element that is greater than the characteristic voltage drop associated with the memristive state or causing a write current through the memristive element that is higher than the characteristic write current associated with the memristive state, each for a total write time that is shorter than the saturation time.