Abstract: According to various aspects, a memristive structure is provided including: a first electrode, a second electrode, and a memristive element arranged between the first electrode and the second electrode; wherein the memristive element includes a memristive material that has a ferroelectric polarization capability, and wherein the memristive material has a crystalline microstructure configured to suppress a substantial ferroelectric switching of the memristive element in response to a voltage drop over the memristive element applied via the first electrode and the second electrode.