Abstract: A method of doping silicon that involves placing a silicon wafer in spaced relationship to a solid phosphorus dopant source at a first temperature for a time sufficient to deposit a phosphorus-containing layer on the surface of the wafer and subsequently oxidizing the doped silicon wafer with wet oxygen or pyrogenic steam at a second temperature lower than the first temperature. The silicon wafer is maintained in spaced relationship to the solid phosphorus dopant source during the oxidizing step. The temperatures are selected such that the solid phosphorus dopant source evolves P2O5 at the first temperature and the second temperature is sufficiently lower than the first temperature to decrease evolution of P2O5 from the solid phosphorus dopant source during the oxidizing step.

Abstract: A sealing glass composition in powdered form comprising a crystallizable PbO/ZnO/B2O3/SiO2 glass in the vitreous state, an effective amount of a nucleating agent, and an optional filler. The glass composition can be used to seal television picture tubes with excellent results when heated to a hold range of about 420° C. to about 435° C.

Abstract: A sealing glass composition in powdered form comprising a crystallizable base glass in the vitreous state and vanadium zirconium silicate in an amount from about 0.1 to 1 weight percent of the base glass. The sealing glass also may contain aluminum oxide having a particle size of about 90 to 99 percent minus 325 mesh in an amount from about 0.1 to 1.0 weight percent of the base glass and bismuth nitrate in an amount from about 0.02 to 0.08 weight percent of the base glass. The glass composition can be used to seal cathode ray tube face plates and funnels with excellent results when heated to a hold range of about 4300 C to 4500 C. The crystallized sealing glass exhibits improved adhesion to seal edges of the face plates and funnels, increased strength, and improved resistance to organic contamination.

Abstract: The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.

Abstract: The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.

Abstract: The present invention relates to a solid high temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 3 and R is La, Y, Ce, Nd, Eu, Pt, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and to the doped silicon wafer.

Abstract: The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.