Abstract: The present invention relates to an aqueous chemical composition C for removing from a substrate selectively under heat residues of a nickel-platinum alloy containing at least 8% by weight of Pt compared to the total weight of nickel-platinum alloy, characterised in that it is prepared by mixing a composition B comprising bromide ions and a composition H comprising hydrogen peroxide such that in the composition C, at the moment of mixing, the molar concentration of bromide ions is comprised between 0.15 mol/L and 0.45 mol/L and the molar ratio of hydrogen peroxide with respect to bromide ions is comprised between 1.1 and 2.

Abstract: The present invention relates to an aqueous chemical composition C for removing from a substrate selectively under heat residues of a nickel-platinum alloy containing at least 8% by weight of Pt compared to the total weight of nickel-platinum alloy, characterised in that it is prepared by mixing a composition B comprising bromide ions and a composition H comprising hydrogen peroxide such that in the composition C, at the moment of mixing, the molar concentration of bromide ions is comprised between 0.15 mol/L and 0.45 mol/L and the molar ratio of hydrogen peroxide with respect to bromide ions is comprised between 1.1 and 2.

Abstract: The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water.

Abstract: A cleaning chemical composition suitable for removing, from a substrate, a passivation layer comprising etching residues resulting from etching of said substrate, includes a weak acid comprising acetic acid, the weak acid content being between 20% by weight and 95% by weight, preferably between 50% by weight and 80% by weight, relative to the weight of the chemical composition, a non-oxidising strong acid comprising methanesulphonic acid, the non-oxidising strong acid content being between 5% by weight and 50% by weight, preferably between 15% by weight and 50%, relative to the weight of the chemical composition, hydrofluoric acid, whose content is between 0.2% by weight and 2% by weight relative to the weight of the chemical composition, water whose content is between 2% by weight and 20% by weight relative to the weight of the chemical composition.

Abstract: The invention relates to a solution for etching titanium based materials, comprising from about 27 w % to about 39 w % hydrogen peroxide, from about 0.2 w % to about 0.5 w % potassium hydroxide, and at about 0.002 w % to about 0.02 w % 1,2-Diaminocyclohexane-N,N,N,N Tetra acetic Acid (CDTA), the rest being water, said solution comprising no corrosion inhibitor, and said solution having a pH comprised between about 7 and about 8. The invention further relates to a chemical composition for preparing such a solution by mixing said composition with concentrated hydrogen peroxide, said chemical composition comprising potassium hydroxide from about 5 w % to about 30 w %, C.D.T.A. at a concentration ranging from about 1% to about 5% of the potassium hydroxide concentration, the rest being water.

Abstract: The present invention relates to the formulation of a chemical, comprised of an ether solvent as the principal solvent, an ether or non-ether cosolvent, an acid, optionally a surfactant and optionally a corrosion inhibitor, dedicated to the complete and selective stripping by pure dissolution of photoresists (novolac and semi-novolac) of all thicknesses used in microelectronic component integration processes. Said solution is optimized to dissolve the polymer matrix while ensuring and protecting the physicochemical integrity of exposed materials such as metal interconnections (copper, aluminum), dielectrics (SiO2, MSQ, etc.) and adhesion and diffusion barriers (TiN, Ti, Ta, TaN, etc.). Furthermore, the singular cleaning properties and performance characteristics of these solutions make it possible to envisage the use thereof in a variety of industrial applications such as single wafer, batch, immersion and/or spray by simple adjustment of process time and temperature.