Abstract: An etching device is disclosed which comprises a high frequency generator and a reactor in close proximity to each other. The reactor has a plasma zone and a processing zone which open directly into each other. The device is advantageous for chemical dry etching in that a short distance between plasma zone and processing zone offers the benefit of small radical loss.
Abstract: The invention relates to an ion beam gun having a pair of electrodes for applying a high-frequency high voltage to ionize an ionization gas, the ions produced being extracted by an extraction electrode arranged behind the pair of electrodes in the direction of the ion beam (FIG. 1).