Abstract: A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Abstract: A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.

Abstract: A gas sensing device that includes a (a) gas reactive element that has a gas dependent temperature parameter; and (b) a semiconductor temperature sensing element that is spaced apart from the gas reactive element and is configured to sense radiation emitted from the gas reactive element and generate detection signals that are responsive to a temperature of the gas reactive element; wherein the gas reactive element and the semiconductor temperature sensing element are of microscopic scale.

Abstract: A multistate register, comprising: a flip-flop that comprises a first latch, a second latch and an intermediate gate coupled between the first and second latches; multiple memristive devices; and an interface coupled between the multiple memristive devices and the flip-flop; wherein the multistate register is arranged to operate in a memristive device write mode, in a memristive device read mode and in a flip-flop mode; wherein when operating in the memristive device read mode, the interface is arranged to write to a first selected memristive device of the multiple memristive devices a first logic value stored in the first latch; wherein when operating in the memristive device write mode, the interface is arranged to write to the second latch a second logic value stored in a second selected memristive device of the multiple memristive devices; and wherein when operating on a flip-flop mode logic the interface is prevented from transferring values between the flip flop and the memristive devices.

Abstract: A receiver that may include a receiver front end arranged to receive (a) a received signal, (b) a reference signal generated by a local oscillator laser, and to output a first intermediate signal; a carrier phase estimator that is arranged to receive the first intermediate signal and to generate a phase estimation signal that represents a phase difference between the received signal and the reference signal; wherein the carrier phase estimator comprises a multi-symbol-differential-detection module and a carrier phase demodulator; and an output circuit arranged to receive the phase estimation signal and to apply a slicing operation to provide an output signal of the carrier phase estimator.

Abstract: A device for use in reducing or preventing the occurrence of restenosis following procedures such as PTCA, in which a stent is used to hold a bodily lumen open. The device comprises a two layered stent, one lying within the other. Both stent layers have an open weave structure, such that they can expand to the correct dimensions after implantation. The outer stent layer is static and grips the inner wall of the lumen in which it is deployed in the usual manner. The inner layer stent is constructed such that it can be vibrated relative to the outer static stent layer. The inner layer stent may be made of a material which can be vibrated from an external source, such as a ferromagnetic material. This vibration prevents restenosis of the treated lumen. Alternatively, a vibrator, such as a piezoelectric device, can be installed on the inner stent layer.

Abstract: There are provided methods and compositions useful in cell-cell fusion using Fusion Family (FF) proteins of nematode origin. There are further provided antinematodal methods and compositions, utilizing fusogenic proteins of the nematode Fusion Family.

Abstract: A method for increasing intestinal function is provided. The method comprising orally and/or enterally administering to a subject in need thereof a therapeutically effective amount of insulin, thereby increasing intestinal function.