Abstract: The invention comes within the field of digital memories having thin magnetic layers, for the propagation of domains. This memory is constituted by an anisotropic linear magnetic channel which is applied on a glass substrate and which has a single shift conductor in a Greek border configuration superimposed on it. Areas made of soft magnetic material are provided at the intersection between the channels and the conductors. According to such a structure, high-capacity shift registers which are of relatively rapid access (one shift step lasts about 500 nanoseconds) can be produced.

Abstract: In digital registers for the propagation of magnetic domains in thin layers, one of the shift conductors is combined with an extra layer which is magnetically hard and which sets up a permanent field on the edge of that conductor, this facilitating the propagation of the domains.

Abstract: Reading unit for a shift register according to the thin magnetic layer technology. For reading, the magnetoresistance effect is used. According to the invention, an electrical conductor, which overhangs the propagation channel is interrupted at the central point of the reading unit and a hard magnetic layer whose magnetization is directed perpendicularly to the easy axis of the propagation channel is deposited at that point. That layer tends to align the magnetization of the channel with its own magnetization and makes it possible, in co-operation with an energizing conductor, to obtain a difference in the resistance of the reading unit between the two states of a digital data item.