Abstract: A method for determining a thermal impedance of a sample device is described. According to the method, a sample device is heated to an initial temperature. A pulsed power including a sequence of pulses is applied to the sample device. Temperature of the sample device is measured in a time-dependent manner. A thermal impedance of the sample device is determined based on the temperature of the sample device and the pulsed power.

Abstract: The invention relates to a system and to a method for the inductive transmission of energy, comprising feeding a first resonant circuit with a plurality of current pulses and inductively transmitting energy from the first resonant circuit to a second resonant circuit, which is inductively coupled to the first resonant circuit, wherein the current pulses flow through a switch of a first power stage, which switch is coupled to the first resonant circuit and is periodically switched on.

Abstract: A semiconductor package (1, 1?, 1?), the package (1, 1?, 1?) comprising a first substrate (2) comprising at a front cavity side (5?) a plurality of cavities (6, 6?), each of the cavities (6, 6?) having a bottom wall (7) and side walls (8), and having a conductive path (10) forming an electric contact surface (9) located at the inner side of the bottom wall (7) of the cavity (6, 6?), a plurality of semiconductor elements (16, 7), each of the semiconductor elements (16, 17) comprising a first electric contact surface (9) on a first side (26) and a second electric contact surface (9) on a second side (28) opposite to the first side (26), wherein at least one of the semiconductor elements (16, 17) is placed within a corresponding cavity (6, 6?) at the front cavity side (5?) of the first substrate (2), wherein the first electric contact (27) of the semiconductor element (16, 17) and the electric contact surface (9) at the inner side of the bottom wall (7) of the corresponding cavity (6, 6?) are electrically conduc

Abstract: A semiconductor package (1, 1?, 1?), the package (1, 1?, 1?) comprising a first substrate (2) comprising at a front cavity side (5?) a plurality of cavities (6, 6?), each of the cavities (6, 6?) having a bottom wall (7) and side walls (8), and having a conductive path (10) forming an electric contact surface (9) located at the inner side of the bottom wall (7) of the cavity (6, 6?), a plurality of semiconductor elements (16, 7), each of the semiconductor elements (16, 17) comprising a first electric contact surface (9) on a first side (26) and a second electric contact surface (9) on a second side (28) opposite to the first side (26), wherein at least one of the semiconductor elements (16, 17) is placed within a corresponding cavity (6, 6?) at the front cavity side (5?) of the first substrate (2), wherein the first electric contact (27) of the semiconductor element (16, 17) and the electric contact surface (9) at the inner side of the bottom wall (7) of the corresponding cavity (6, 6?) are electrically conduc