Abstract: A method of fabricating at least one nanochannel in a semiconductor material applied on a substrate, comprising the semiconductor material being subjected to an etching treatment and the substrate to a bonding treatment so as to attach a covering layer to the substrate, in which bonding treatment the semiconductor material is applied as bonding agent, and wherein prior to etching, the semiconductor material is locally doped for the formation of electrodes.
Type:
Application
Filed:
January 12, 2006
Publication date:
February 22, 2007
Applicant:
Technische Universiteit Deflt
Inventors:
Vladimir Kutchoukov, Adrianus Bossche, Frederic Laugere, Wim Van Der Vlist