Abstract: Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

Abstract: An electrolyte for a rechargeable lithium battery including a non-aqueous organic solvent, a lithium salt, and an electrolyte additive including a compound represented by the following Chemical Formula 1, and a rechargeable lithium battery including the electrolyte for a rechargeable lithium battery. In Chemical Formula 1, Ar1 and Ar2 are the same or different and are independently aromatic organic groups, and X is a halogen.

Abstract: An etchant composition that allows simplification and optimization of semiconductor manufacturing process is presented, along with a method of patterning a conductive layer using the etchant and a method of manufacturing a flat panel display using the etchant. The etchant includes nitric acid, phosphoric acid, acetic acid, and an acetate compound in addition to water.

Abstract: Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

Abstract: A photosensitive-resin remover composition includes an amine compound and de-ionized water, an amount of the de-ionized water being about 45% to about 99% by weight based on a total weight of the composition.

Abstract: Disclosed are an electrolyte for a rechargeable lithium battery that includes a lithium salt, a non-aqueous organic solvent, and an additive including a triazine-based compound represented by the following Chemical Formula 1 and fluoroethyl carbonate, and a rechargeable lithium battery including the electrolyte. where R1, R2, and R3 are the same as described in the detailed description.

Abstract: A negative photoresist composition and a method of manufacturing an array substrate. The negative photoresist composition includes a photocurable composition including an ethylene unsaturated compound containing an ethylene unsaturated bond and a photopolymerization initiator, a thermosetting composition including an alkali-soluble resin crosslinked by heat and an organic solvent. The negative photoresist composition improves stability, photosensitivity, detachability after performing a developing operation and reduces residue to improve the reliability of an organic insulation layer. Furthermore, the negative photoresist composition improves the transmittance of an organic insulation layer and reduces the variation of color coordinates to improve the display quality of a display apparatus.

Abstract: An electrolyte for a rechargeable lithium battery including a non-aqueous organic solvent, a lithium salt, and an electrolyte additive including a compound represented by the following Chemical Formula 1, and a rechargeable lithium battery including the electrolyte for a rechargeable lithium battery. In Chemical Formula 1, Ar1 and Ar2 are the same or different and are independently aromatic organic groups, and X is a halogen.

Abstract: Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).

Abstract: The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.

Abstract: The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

Abstract: Provided are a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.

Abstract: Disclosed is a chemical-mechanical polishing composition used in a process for chemical-mechanical polishing of silicon oxide layer having severe unevenness with large step-height. The composition includes abrasive particles of metal oxide; and at least one compound(s) selected from the group consisting of amino alcohols, hydroxycarboxylic acid having at least 3 of the total number of carboxylic acid group(s) and hydroxyl group(s) or their salts, or a mixture thereof. A polymeric organic acid, a preservative, a lubricant and a surfactant may be further contained. The composition shortens the vapor-deposition time of a layer to be polished, saves the raw material to be vapor-deposited, shortens the chemical-mechanical polishing time, and saves the slurry employed.

Abstract: The present invention relates to a CMP slurry composition for copper damascene process of semiconductor manufacturing process. The barrier CMP slurry composition for copper damascene process of the present invention does not include an oxidant, so that it exhibits excellent reproducibility of polishing performance, low etching speed, and adequate polishing speed for copper layer, silicon oxide film and Ta-based film. Thus, the slurry composition of the invention has such advantages as easy dishing or erosion removal, excellent dispersion stability, and low scratch level, making it excellent barrier CMP slurry composition for copper damascene process.

Abstract: The present invention provides organometallic compounds and methods of forming thin films including using the same. The organometallic compounds include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1): wherein R1 and R2 are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.

Abstract: The present invention relates to a CMP slurry composition for polishing a copper film in a semiconductor device fabricating process. The CMP composition for polishing a substrate comprising copper comprises zeolite, an oxidizer and a complexing agent and a content of the complexing agent is 0.01˜0.8 weight % with respect to an entire weight of the polishing composition.

Abstract: The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist.

Abstract: The present invention relates to a novel slurry composition for copper polishing, comprising zeolite which is a porous crystalline material for CMP of copper film in a semiconductor manufacturing process. The slurry composition according to the present invention comprises zeolite, an oxidant and a polish promoting agent and may further comprise a corrosion inhibitor, a surfactant, an aminoalcohol, an antiseptic and a dispersion agent and pH is in a range of 1 to 7. The zeolite slurry according to the present invention has advantages of absorbing and removing metal cation generated in CMP process by using zeolite and having a low level of scratches as the zeolite has micropores therein and thus its hardness is low. The slurry composition using zeolite of the present invention is usable to both first and second step polishing of copper damascene process and particularly useful as the first step polishing slurry for copper.

Abstract: A negative photoresist composition and a method of manufacturing an array substrate. The negative photoresist composition includes a photocurable composition including an ethylene unsaturated compound containing an ethylene unsaturated bond and a photopolymerization initiator, a thermosetting composition including an alkali-soluble resin crosslinked by heat and an organic solvent. The negative photoresist composition improves stability, photosensitivity, detachability after performing a developing operation and reduces residue to improve the reliability of an organic insulation layer. Furthermore, the negative photoresist composition improves the transmittance of an organic insulation layer and reduces the variation of color coordinates to improve the display quality of a display apparatus.

Abstract: A method for manufacturing a semiconductor device with a slurry composition for forming a tungsten pattern. The method comprises: forming a trench in an insulating film formed on a substrate; depositing a tungsten film over the insulating film including the trench; first polishing a tungsten film with a first slurry for polishing metal to expose the insulating film, the polishing selectivity ratio of the first slurry onto tungsten/insulating film being range from 30 to 100; and second polishing the insulating film and the tungsten film with a second slurry, the polishing selectivity ratio of the second slurry onto insulating film/tungsten being range from 3 to 500. The method reduces a thickness difference of tungsten patterns, thereby improving a production yield of semiconductor devices.