Abstract: An integrated circuit includes a power supply monitor, a clock generator, and a divider. The power supply monitor is operable to provide a trigger signal in response to a power supply voltage dropping below a threshold voltage. The clock generator is operable to provide a first clock signal having a frequency dependent on a value of a frequency control word, and to change the frequency of the first clock signal over time using a native slope in response to a change in the frequency control word. The divider is responsive to an assertion of the trigger signal to divide a frequency of the first clock signal by a divide value to provide a second clock signal.

Abstract: A apparatus includes a reference signal generator, a droop detection circuit, a digital frequency-locked loop (DFLL), and a DFLL control circuit. The reference signal generator that receives a digital value and produces a pulse-density modulated signal based on the digital value. The droop detection circuit converts the pulse-density modulated signal to an analog signal, compares the analog signal to a monitored supply voltage, and responsive to detecting a droop of the monitored supply voltage below a designated value relative to the analog signal, produces a droop detection signal. The DFLL provides a clock signal for synchronizing circuitry within a domain of the monitored supply voltage. The DFLL control circuit, responsive to receiving the droop detection signal, causes the DFLL to slow the clock signal.

Abstract: Methods and devices are provided for processing data using a neural network. Activations from a previous layer of the neural network are received by a layer of the neural network. Weighted values, to be applied to values of elements of the activations, are determined based on a spatial correlation of the elements and a task error output by the layer. The weighted values are applied to the values of the elements and a combined error is determined based on the task error and the spatial correlation.

Abstract: An output clock frequency of an adaptive oscillator circuit changes in response to noise on an integrated circuit power supply line. The circuit features two identical delay lines which are separately connected to a regulated supply and a droopy supply. In response to noise on the droopy supply, the delay lines cause a change in the output clock frequency. The adaptive oscillator circuit slows down the output clock frequency when the droopy supply droops or falls below the regulated supply. The adaptive oscillator circuit clamps the output clock frequency at a level determined by the regulated supply when the droopy supply overshoots or swings above the regulated supply.

Abstract: Data processing methods and devices are provided. A processing device comprises memory and a processor. The memory, which comprises a cache, is configured to store portions of data. The processor is configured to issue a store instruction to store one of the portions of data, provide identifying information associated with the one portion of data, compress the one portion of data; and store the compressed one portion of data across multiple lines of the cache using the identifying information. In an example, the one portion of data is a block of pixels and pixels and the processor is configured to request pixel data for a pixel of a compressed block of pixels, send additional requests for data for other pixels determined to belong to the compressed pixel block and provide an indication that the requests are for pixel data belonging to the compressed block of pixels.

Abstract: Manufacturing a semiconductor chip based on redefining tolerance rules to create an otherwise prohibited structure including redefining a tolerance rule to permit creation of a minimum area metal trench structure violating the tolerance rule during a routing operation; and fabricating the minimum area metal trench structure on the semiconductor substrate based on the redefined tolerance rule.

Abstract: Systems, apparatuses, and methods for implementing kernel software driven color remapping of rendered primary surfaces are disclosed. A system includes at least a general processor, a graphics processor, and a memory. The general processor executes a user-mode application, a user-mode driver, and a kernel-mode driver. A primary surface is rendered on the graphics processor on behalf of the user-mode application. The primary surface is stored in memory locations allocated for the primary surface by the user-mode driver and the kernel-mode driver is notified when the primary surface is ready to be displayed. Rather than displaying the primary surface, the kernel-mode driver causes the pixels of the primary surface to be remapped on the graphics processor using a selected lookup table (LUT) so as to generate a remapped surface which stored in memory locations allocated for the remapped surface by the user-mode driver. Then, the remapped surface is displayed.

Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.