Patents Assigned to Technologies and Deviles International, Inc.
  • Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device
    Patent number: 6890809
    Abstract: A method for fabricating a p-n heterojunction device is provided, the device being preferably comprised of an n-type GaN layer co-doped with silicon and zinc and a p-type AlGaN layer. The device may also include a p-type GaN capping layer. The device can be grown on any of a variety of different base substrates, the base substrate comprised of either a single substrate or a single substrate and an intermediary layer. The device can be grown directly onto the surface of the substrate without the inclusion of a low temperature buffer layer.
    Type: Grant
    Filed: August 9, 2002
    Date of Patent: May 10, 2005
    Assignee: Technologies and Deviles International, Inc.
    Inventors: Sergey Karpov, Alexander Usikov, Heikki I. Helava, Denis Tsvetkov, Vladimir A. Dmitriev