Abstract: A light receiving element includes a first semiconductor layer of a first conductivity type to which a first potential is to be applied, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, first and second regions of the first conductivity type formed in an upper portion of the second semiconductor layer, a first electrode that is located on the first region and is to be subjected to application of a second potential, a second electrode located on the second region, an insulation layer formed on the second semiconductor layer between the first and the second regions, and a gate electrode that is formed on the insulation layer and is to be subjected to application of a gate voltage. A current readout unit detects, as a pixel signal reflecting an amount of light received, a current flowing from the first region to the second region.

Abstract: A light receiving element includes a first semiconductor layer of a first conductivity type to which a first potential is to be applied, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer, first and second regions of the first conductivity type formed in an upper portion of the second semiconductor layer, a first electrode that is located on the first region and is to be subjected to application of a second potential, a second electrode located on the second region, an insulation layer formed on the second semiconductor layer between the first and the second regions, and a gate electrode that is formed on the insulation layer and is to be subjected to application of a gate voltage. A current readout unit detects, as a pixel signal reflecting an amount of light received, a current flowing from the first region to the second region.