Abstract: A process for manufacturing a ferroelectric device includes the steps of chemically cleaning a substrate, followed by radio frequency etching of the substrate. The substrate is then pre-heated. A first electrical contact is then formed on the substrate, and over a portion of the first electrical contact there is vapor deposited a stable thin film of potassium nitrate. Then a second electrical contact is formed over at least a part of the thin film of potassium nitrate. A covering of silicon monoxide is then vacuum deposited over the assemblage of the first and second electrical contacts and the potassium nitrate. The assemblage is then annealed for approximately twenty-four hours at a temperature of approximately 160.degree. C.

Abstract: A ferroelectric Phase III potassium nitrate (KNO.sub.3) which is stable at ambient temperatures is produced in accordance herewith by crystallizing reagent grade KNO.sub.3 under vacuum and heat and, then, equilibrating the resultant to ambient conditions. This stable Phase III KNO.sub.3 which is of crystalline structure exhibits visual and optical effects when subjected to mechanical and electrical alteration of the polarization vector of the crystalline structure, thus, rendering it useful in the manufacture of transparent electrodes by interposing this crystalline material between the electrodes, and the like. Furthermore, ferroelectric thin film memory arrays can be produced herefrom.