Abstract: Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. In one embodiment, the fluid mixture may be maintained to prevent liquid formation within the fluid mixture prior to passing the fluid mixture through the nozzle. The fluid mixture may include nitrogen, argon, helium, neon, xenon, krypton, carbon dioxide, or any combination thereof.

Abstract: A system and method for treating a substrate is described. In particular, the system and method for treating a substrate include techniques for removing particles from the surface of a microelectronic substrate. The system includes: a vacuum process chamber; a substrate stage for supporting a microelectronic substrate within the vacuum process chamber; a cryogenic fluid supply system that can provide a fluid or fluid mixture through one or more nozzles arranged within the vacuum process chamber to inject a fluid spray into the process chamber in a direction towards an upper surface of the microelectronic substrate; and a process monitoring system coupled to the vacuum process chamber, and arranged to collect fluid spray data corresponding to at least one measured attribute of the injected fluid spray downstream of an exit of the one or more nozzles.

Abstract: Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. In particular, an improved nozzle design used to expand the fluid mixture is disclosed herein. In one embodiment, the nozzle design incorporates a two nozzle pieces are combined to form a single nozzle design, in which the two pieces are slight misaligned to form a unique orifice design. In another embodiment, two pieces are combined and aligned along a common axis of the fluid conduit. However, an offset piece is inserted between the two pieces and has a hole that misaligned from the flow conduits of the two other pieces.

Abstract: A wafer edge lift pin of an apparatus for manufacturing a semiconductor device is described. The wafer edge lift pin includes an offset top section containing a notch portion to support and laterally confine the wafer. The notch portion horizontally sweeps away from the wafer along a radius so that rotation adjusts lateral confinement of the wafer. A base section below the top section has a diameter greater than a diameter of the top section across the notch portion to help strengthen the pin and to allow perpendicular mounting. A bottom section has a diameter that is smaller than the diameter of the base section and provides a boss feature to mount the lift pin. The apparatus includes a process chamber where the wafer is processed, a chuck assembly on which the wafer is loaded. At least three wafer edge lift pins move the wafer up and down.

Abstract: Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. In one embodiment, the fluid mixture may be maintained to prevent liquid formation within the fluid mixture prior to passing the fluid mixture through the nozzle. The fluid mixture may include nitrogen, argon, helium, neon, xenon, krypton, carbon dioxide, or any combination thereof.

Abstract: An apparatus for treating the surface of a microelectronic workpiece via impingement of the surface with at least one fluid and a method for operating the apparatus are described. In particular, the apparatus includes a treatment chamber defining an interior space to treat the microelectronic workpiece with at least one fluid within the treatment chamber, and a movable chuck that supports the workpiece within the treatment chamber. The apparatus further includes a workpiece translational drive system configured to translate the movable chuck between a workpiece load position and at least one processing position at which the workpiece is treated with the at least one fluid using at least one nozzle connected to at least one fluid supply, and a workpiece rotational drive system configured to rotate the microelectronic workpiece.

Abstract: Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, using a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. The fluid mixture may include nitrogen, argon, helium, neon, xenon, krypton, carbon dioxide, or any combination thereof. The incoming fluid mixture may be maintained pressure greater than atmospheric pressure and at a temperature greater than the condensation temperature of the fluid mixture. The fluid mixture may be expanded into the treatment chamber to form an aerosol or gas cluster spray. In this embodiment, the nozzle may be positioned within 50 mm of the microelectronic substrate during the treatment, more preferably within 10 mm of the microelectronic substrate.

Abstract: Disclosed herein are systems and methods for treating the surface of a microelectronic substrate, and in particular, relate to an apparatus and method for scanning the microelectronic substrate through a cryogenic fluid mixture used to treat an exposed surface of the microelectronic substrate. The fluid mixture may be expanded through a nozzle to form an aerosol spray or gas cluster jet (GCJ) spray may impinge the microelectronic substrate and remove particles from the microelectronic substrate's surface. In one embodiment, the fluid mixture may be maintained to prevent liquid formation within the fluid mixture prior to passing the fluid mixture through the nozzle. The fluid mixture may include nitrogen, argon, helium, neon, xenon, krypton, carbon dioxide, or any combination thereof.

Abstract: The disclosure relates to systems and methods for metering a dose volume of fluid that may be used to treat microelectronic substrates. The system enables precision dispensing of relatively small amounts of a liquid chemical into a chemical bath or processing chamber for microelectronic substrates. The dispensing device may include a fluid conduit with a plurality of actuation devices that may limit fluid communication between the actuation devices and store a portion of the fluid in expandable membrane. The actuation devices may push or pull the fluid within the fluid conduit when the expandable membrane expands or contracts. The configuration and operation of the actuation devices may enable the collection, isolation, and dispensing of the dose volume.

Abstract: Embodiments of the invention provide a processing system and a method for processing with a heated etching solution. In one example, tight control over temperature and hydration level of an acidic etching solution is provided. According to one embodiment, the method includes forming the heated etching solution in a first circulation loop, providing the heated etching solution in the process chamber for treating a substrate, forming an additional heated etching solution in a second circulation loop, and supplying the additional heated etching solution to the first circulation loop. According to one embodiment, the processing system includes a process chamber for treating the substrate with the heated etching solution, a first circulation loop for providing the heated etching solution into the process chamber, and a second circulation loop for forming an additional heated etching solution and supplying the additional heated etching solution to the first circulation loop.

Abstract: Rinsing methodologies and components to accomplish rinsing of tool surfaces in tools that are used to process one or more microelectronic workpieces. The invention can be used to rinse structures that overlie a workpiece being treated in such a manner to function in part as a lid over the process chamber while also defining a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, a swirling flow of rinse liquid is generated on a surface of at least one fluid passage upstream from the surface to be rinsed. The swirling flow then provides smooth, uniform wetting and sheeting action to accomplish rinsing with a significantly reduced risk of generating particle contamination.

Abstract: A method and processing system are provided for independent temperature and hydration control for an etching solution used for treating a wafer in process chamber. The method includes circulating the etching solution in a circulation loop, maintaining the etching solution at a hydration setpoint by adding or removing water from the etching solution, maintaining the etching solution at a temperature setpoint that is below the boiling point of the etching solution in the circulation loop, and dispensing the etching solution into the process chamber for treating the wafer. In one embodiment, the dispensing includes dispensing the etching solution into a processing region proximate the wafer in the process chamber, introducing steam into an exterior region that is removed from the wafer in the process chamber, and treating the wafer with the etching solution and the steam.

Abstract: A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGex (x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGex. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.

Abstract: The present invention provides a tool for treating microelectronic workpieces with one or more treatment materials, including liquids, gases, fluidized solids, dispersions, combinations of these, and the like.

Abstract: The disclosure relates to systems and methods for detecting when a microelectronic substrate is no longer properly secured or lost from a rotating chuck. A microelectronic substrate may be secured to a rotating chuck that may rotate the substrate when exposing the substrate to the chemicals during a treatment in a process chamber. The rotating chuck may include one or more detectors to detect the position of a gripping mechanism that secure the microelectronic substrate. The detectors may generate an electrical signal that correlates to the position of the microelectronic substrate. When the electrical signal(s) exceed a threshold the system may stop rotating the chuck to prevent additional damage to the process chamber.

Abstract: Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.

Abstract: Embodiments of the invention are directed towards improving on-wafer process performance and processing at increased processing fluid/wafer temperature while maintaining good process performance. A method for processing a wafer in a process chamber is described where the process chamber includes a wafer holder having first and second sets of edge grippers for independently securing the wafer at the wafer edge during processing, treating the wafer with a first processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, treating the wafer with a second processing fluid while securing the wafer with the first set of edge grippers, but not with the second set of edge grippers, and treating the wafer with a third processing fluid while securing the wafer with the second set of edge grippers, but not with the first set of edge grippers.

Abstract: A method of treating one or more wafers is provided. The method comprises the steps of: a) providing at least one wafer, that has first and second opposed major faces and at least one feature, such as a metal silicide, that is sensitive to a neutralizing chemistry on the first major face; b) causing an acidic chemistry, such as a sulfuric acid and/or phosphoric acid, to contact the first major face of the wafer and causing the wafer to spin; c) after causing the acidic chemistry to contact the wafer, causing a non-etching rinsing fluid to contact the first major face while the wafer is spinning; and d) during at least a portion of the time that the non-etching rinsing fluid is caused to contact the first major face of the spinning wafer, causing a neutralizing liquid to contact the second major face of the spinning wafer.

Abstract: Rinsing methodologies and components to accomplish rinsing of tool surfaces in tools that are used to process one or more microelectronic workpieces. The invention can be used to rinse structures that overlie a workpiece being treated in such a manner to function in part as a lid over the process chamber while also defining a tapering flow channel over the workpiece. Rather than spray rinsing liquid onto the surface in a manner that generates undue splashing, droplet, or mist generation, a swirling flow of rinse liquid is generated on a surface of at least one fluid passage upstream from the surface to be rinsed. The swirling flow then provides smooth, uniform wetting and sheeting action to accomplish rinsing with a significantly reduced risk of generating particle contamination.

Abstract: A method for selectively removing silicon nitride is described. In particular, the method includes providing a substrate having a surface with silicon nitride exposed on at least one portion of the surface and SiGex (x is greater than or equal to zero) exposed on at least another portion of the surface, and dispensing an oxidizing agent onto the surface of the substrate to oxidize the exposed SiGex. Thereafter, the method includes dispensing a silicon nitride etching agent as a liquid stream onto the surface of the substrate to remove at least a portion of the silicon nitride.