Abstract: A miniaturized NDIR gas sensor is manufactured using semiconductor micromachining techniques from a semiconductor material such as Si or GaAs. The NDIR gas sensor comprises an optical waveguide, a light source at one end of the waveguide, at least one light detector at the end of the waveguide opposite the light source, a diffusion type gas sample chamber formed within the waveguide and interposed in the optical path between the light source and light detector so that the light source and light detector are thermally isolated from the gas sample, and a separate bandpass filter interposed between the light source and each light detector. A miniaturized NDIR gas sensor is also provided in which the light source and light detector are located on the same end of the optical waveguide is also provided. Because the NDIR sensor is fabricated out of a semiconductor material, the source driver and signal processing electronics may be added directly to the sensor using integrated circuit fabrication techniques.

Abstract: A miniaturized NDIR gas sensor is manufactured using semiconductor micromachining techniques from a semiconductor material such as Si or GaAs. The NDIR gas sensor comprises an optical waveguide, a light source at one end of the waveguide, at least one light detector at the end of the waveguide opposite the light source, a diffusion type gas sample chamber formed within the waveguide and interposed in the optical path between the light source and light detector so that the light source and light detector are thermally isolated from the gas sample, and a separate bandpass filter interposed between the light source and each light detector. Because the NDIR sensor is fabricated out of a semiconductor material, the source driver and signal processing electronics may be added directly to the sensor using integrated circuit fabrication techniques. Particles and smoke and dust may be kept out of the sample chamber by application of a gas permeable membrane over apertures in the sample chamber walls.

Abstract: A radiation source is presented that exhibits an improved efficiency of converting input energy into a quasi-blackbody output beam. A wavelength selective element can be included to transit one or more narrow bands of this radiation for use in spectroscopy. The intensity of the output beam can be varied quickly, thereby decreasing measurement times and enabling synchronous detection techniques to be implemented at reasonable frequencies. A feedback mechanism can be integrated into this device to enable accurate control of the blackbody temperature. This radiation source can be manufactured by conventional integrated circuit manufacturing techniques, thereby producing an inexpensive quasi-blackbody source of accurately and repeatably controlled performance.