Abstract: A high-voltage bi-directional analog switch is implemented using a pair of MOS depletion type transistors having their sources connected together and having their gates connected together. The drains constitute the high voltage input port and the high voltage output port. The switch conducts so long as the voltage on the common gate connection relative to the voltage on the common source connection is more positive that the pinch-off voltage. The source-to-gate voltages are controlled by a means including an enhancement mode transistor. Voltage level shift means are provided to shift low level logic signals to a sufficiently high level to control conductance through said enhancement mode transistor. The source of voltage rails need not provide two high voltages but at most only a single high voltage level is required.