Abstract: The method of manufacturing of a solar cell comprises the steps of: providing a semiconductor substrate (100) comprising an electrically conductive region (11) extending at a first side thereof; and providing a tunnelling oxide (13) by thermal oxidation followed by a boron doped polysilicon LPCVD deposited layer on the second side of the semiconductor substrate. Herein, the provision of the doped polysilicon layer (20) comprises depositing a multilayer stack of first sublayers (21, 22, 23) of silicon and second sublayers (31, 32) of boron dopant in alternation, and subsequent annealing. Thereafter the solar cell is finalized with passivation layers on at least the first side and suitable metallization layers on the emitter and base regions.

Abstract: Methods of manufacturing a solar cell are provided. Aspects of embodiments of the methods include introducing charge carriers into a substrate on a first side by ion implantation to produce an amorphized region followed by selectively recrystallizing material in part of the amorphized region to define a first recrystallized subregion and then at least partially removing recrystallized material from the first subregion. An apparatus for carrying out said method and a resulting solar cell having surface topology are also provided.

Abstract: The invention relates to a method for manufacturing a solar cell from a semiconductor substrate of a first conductivity type, the semiconductor substrate having a front side and a back side, the method comprising in this sequence: creating by diffusion of a dopant of a second conductivity type a second conductivity-type doped layer in the front side and the back side, during diffusion forming of a dopant containing glassy layer on the front and back side; removing the second conductivity-type doped layer and the dopant containing glassy layer from the back side by a single sided etching process, while maintaining the dopant-containing glassy layer in the front side; creating a Back Surface Field (BSF) layer of the first conductivity type on the back side by implantation of a dopant of the first conductivity type into the back side; removing the dopant containing glassy layer from the front side of said substrate by an etching process; surface oxidation by heating said substrate for a predetermined period of t

Abstract: The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).