Abstract: The raw silicon crusher comprises a pair of beds; and a pair of crushing surfaces on the beds crushing the quenched pure raw silicon by applying pressure; wherein each of the beds comprises a case; pure silicon members arranged inside of the case and protruding from the opening; a block of pure ice fixing the pure silicon members to the case, and each of the crushing surfaces comprises surfaces of ends of protrusions; and surface of the block of ice.

Abstract: The protecting filter comprises: a casing having an inner space; an exhaust gas intake pipe guiding exhaust gas with microparticles; a rotating body supported rotatably on the center axis of the exhaust gas intake pipe and at an opening of the exhaust gas intake pipe inside the casing; and an endless belt provided rotatably inside the casing and facing the opening of the exhaust gas intake pipe across the rotating body and including microparticle collection liquid at least on its surface, wherein the surface of the endless belt contacts the rotating body, the rotating body is rotated by rotation of the endless belt, the microparticle collection liquid on the surface of the endless belt is applied to a surface of the rotating body.

Abstract: A protective filter for vacuum pump comprises: a casing being supplied exhaust gas including microparticles through an exhaust pipe and accommodating microparticle collection liquid inside; a rotating drum having a rotating cylinder and a basket, being filled a filler, the exhaust gas supplied into the casing flows into the rotating cylinder contacting the microparticle collection liquid at a surface of the filler, the exhaust gas is discharged through an opening provided at one end of the rotating cylinder; a roller rotating the basket; and a connecting pipe having an opening facing the opening of the rotating cylinder, fixed to the casing, and connected to the vacuum pump.

Abstract: The raw silicon crusher comprises a pair of beds; and a pair of crushing surfaces on the beds crushing the quenched pure raw silicon by applying pressure; wherein each of the beds comprises a case; pure silicon members arranged inside of the case and protruding from the opening; a block of pure ice fixing the pure silicon members to the case, and each of the crushing surfaces comprises surfaces of ends of protrusions; and surface of the block of ice.

Abstract: A method for CVD processing, comprises the steps of: fixing both ends of a silicon substrate to a pair of electrode mounts; lowering a resistance value of the silicon substrate by raising temperature of the silicon substrate with heat from an outer heater provided outside the case; heating the silicon substrate to a temperature at which the CVD process can be started by applying electrical current, and lowering an atmosphere temperature in the CVD space by stopping the outer heater; and forming a thin film on a surface of the silicon substrate by injecting source gas into the CVD space, when the silicon substrate is heated to the temperature at which the CVD process can be started and the atmosphere temperature in the CVD space is lowered to a predetermined temperature.

Abstract: The silicon heating furnace is constructed by combining two semi-cylindrical furnaces. Each of the semi-cylindrical furnaces has a semi-cylindrical housing, an insulator, heaters, and an isothermal material. Radial direction separation preventing members are arranged in inner side of both ends of circumferential direction of the housing to prevent a separation of the insulator to radial direction. End face of circumferential direction covers are fixed on the radial direction separation preventing members to cover the end faces of circumferential direction of the insulator. Cooling pipes for end faces of circumferential direction through which cooling water passed are arranged between the end faces of circumferential direction of the insulator and the end face of circumferential direction covers.

Abstract: The high viscosity etchant of the present invention comprises an etchant being an alkaline solution for etching a photovoltaic element substrate; a viscosity increasing additive derived from a plant for increasing a viscosity of the etchant. The selective etching method comprises applying the high viscosity etchant to a surface of the photovoltaic element substrate; reacting the high viscosity etchant and the photovoltaic element substrate by heating them; washing the photovoltaic element substrate with pure water.