Abstract: The invention relates to a method and system for performing VPD-DC on wafer surfaces, wherein the pipette substitutes for the function of the scan tube and is operated such that a bulge of scanning liquid protrudes from the pipette channel and contacts the wafer surface for scanning.

Abstract: A crystal support for a crystal pulling system includes two catches that have a respective retaining jaw that is placeable against a thickened neck portion of a crystal. The two catches are moveable into a bearing position in which the two catches bear on the thickened neck portion and into a releasing position in which the two catches are away from the thickened neck portion. In the bearing position, respective contact points of each retaining jaw at which the retaining jaws bear on the thickened neck portion are located on respective sides of a parting plane. The parting plane extends at an angle to at least one of the pivot axes of the catches and, in the bearing position, the respective contact points of each retaining jaw are located on both sides of a crystal plane that extends through an axis of the crystal and parallel to the pivot axes.

Abstract: A PVT method is utilized for production of single crystals in an apparatus, which comprises a growth cell, a process chamber in which the growth cell is located and a heating device surrounding the process chamber for heating the growth cell. In this method, a source material and a seed are introduced into the growth cell, and the process chamber is filled with a process gas and the growth cell is heated, causing the source material to sublimated and resublimated at the seed. An apparatus designed for production of single crystals using the PVT method includes a highly heatable growth cell for accommodation of a source material and a seed, a process chamber accommodating the growth cell with a connection to a process gas source for filling it with a process gas, and a heating device for heating the growth cell.

Abstract: A method for pulling a cylindrical crystal from a melt by a crystal pulling unit includes measuring an actual value of a diameter of the crystal at a surface of the melt, comparing the actual value with a setpoint value for the diameter of the crystal, and setting a height of the annular gap as a function of a deviation between the actual value and the setpoint value using a first controller which has a first readjustment time.

Abstract: The invention relates to a method and system for performing VPD-DC on wafer surfaces, wherein the pipette substitutes for the function of the scan tube and is operated such that a bulge of scanning liquid protrudes from the pipette channel and contacts the wafer surface for scanning.

Abstract: The present invention relates to a sample container for receiving small-volume liquid samples, preferably samples obtained by vapor phase decomposition, wherein the container has an upwardly open receiving region. In accordance with the invention, the receiving region has an outflow opening at its lowest point that is reversibly closed in a liquid-tight manner by an actuator having a closure surface.

Abstract: The invention relates to a process for etching a substrate (3) in an etching chamber (1) with a plasma ignited outside of the etching chamber (1). The process is characterized in that during the etching process at least temporarily at least one gas jet (10) is directed from the side to the radical stream (7) which is directed towards the substrate (3). Furthermore the invention relates to an etching chamber for etching of a substrate (3) with a substrate holder (2) and a plasma source (4) remote to the substrate holder (2), which is characterized in that between the substrate holder (2) and the plasma source (4) at least one nozzle (9) for lateral introduction of a gas jet (10) into the etching chamber (1) is provided. With this invention the distribution of the active species on the surface of a substrate can be easily influenced.

Abstract: The invention is directed to an arrangement for generating a chemically active jet (active gas jet) by a plasma generated by electric discharge in a process gas. It is the object of the invention to find a novel possibility for generating a chemically active jet by a plasma generated by electric discharge in which high chemical activity develops at increased process gas velocity of the active gas jet on the surface to be treated and is electrically neutral already at the output of the arrangement, so that it does not pose a threat to the operating personnel, the environment and the treated surface. This object is met in that the discharge chamber has a conically narrowed end for increasing the velocity of the active gas jet, and a limiting channel for preventing propagation of the discharge zone into the free space for the surface to be treated is arranged following the narrowed end of the discharge chamber.

Abstract: The invention is directed to an arrangement for generating a chemically active jet (active gas jet) by a plasma generated by electric discharge in a process gas. It is the object of the invention to find a novel possibility for generating a chemically active jet by a plasma generated by electric discharge in which high chemical activity develops at increased process gas velocity of the active gas jet on the surface to be treated and is electrically neutral already at the output of the arrangement, so that it does not pose a threat to the operating personnel, the environment and the treated surface. This object is met in that the discharge chamber has a conically narrowed end for increasing the velocity of the active gas jet, and a limiting channel for preventing propagation of the discharge zone into the free space for the surface to be treated is arranged following the narrowed end of the discharge chamber.

Abstract: The invention relates to a method of treating the surface of a material or of an object by means of plasma generated by an electric discharge. It also relates to a device for implementing the method. The electric discharge is stabilized by confining said plasma in the form of at least one string, and the surface treatment is performed by putting the surface in contact with the plasma string along said string.

Abstract: A surface treatment method wherein one or more active particle streams are generated and aimed at a surface to be treated so that the particle stream interacts therewith. The active particle stream consists of activated particles forming chemically active sites on the surface, and modifying particles occupying said sites. The energy of the activated particles is greater than the energy at break of the inhibited surface bonds of the surface, and lower than the radiative flaw formation energy on the surface. The strength of the particle stream at the treated surface is greater than a quantity N/t where N is the surface density of the inhibited bonds to be broken and t is the duration of exposure of any point on the treated surface to the stream. A device for carrying out the method is also provided.

Abstract: A four-nozzle plasma generator comprising two anode electrode chambers and two cathode electrode chambers connected to DC power sources and generating four plasma jets of which the shape and the path are determined by an external magnetic field system. The plasma jets converge on a central area into which the material to be processed is injected, in order to form a single plasma stream. The nozzles are symmetrically arranged on a hood which includes a flat water-cooled diaphragm provided with a central aperture.